Analysis of SiC BJT RBSOA

Gao, Yan; Huang, Alex Q.; Chen, B.; Agarwal, Anant; Krishnaswami, Sumi; Scozzie, Charles

doi:10.1109/ispsd.2006.1666126

Cited by 9 publications

(4 citation statements)

References 2 publications

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“…The criterion of breakdown is BreakCriteria {Current (Contact ="drain" Absval =1e-7)}.In order to verify the correctness of the model, the above models are used to simulate the structure in Ref. [12][13], and the simulation results agree with the experiments well. Therefore, the model can be used to simulate the proposed structure to obtain reliable results.…”

Section: Resultsmentioning

confidence: 93%

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

Zhang

Duan

Yang

2020

IEEE J. Electron Devices Soc.

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In this paper, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventional base-source short connection mode in SiC Vertical Double-diffusion MOSFET (VDMOS). It found that the device can obviously improve many problems of SiC Insulated Gate Bipolar transistor (IGBT) caused by the p-type substrates and eliminate the latch-up effect, having very bright prospects in high power and low frequency applications. The dynamic and static characteristics of the SiC GCBT are studied in detail and compared with SiC VDMOS, SiC IGBT and Si IGBT. Through comparative studies, the analysis results indicate that SiC GCBT has superior static characteristics, including a higher breakdown voltage, a relatively smaller threshold voltage (2.98V) and lower on-state voltage drop, and a much larger on-state current which is 28% higher than that of Si IGBT and 71% higher than that of SiC IGBT. In terms of dynamic characteristics, SiC GCBT has the shortest turn-on time, and the turn-off characteristics of the device are also improved compared with SiC and Si IGBT.

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Section: Resultsmentioning

confidence: 93%

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

Zhang

Duan

Yang

2020

IEEE J. Electron Devices Soc.

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“…Before the simulation of SiC GCBTP, ISE TCAD was used to simulate the structure in Refs. [14,15]. The main physical models are applied, including effective intrinsic density, Old Slotboom, mobility (Doping Dep High Fieldsat), Shockley-Read-Hall, and Auger avalanche (Eparal) model for recombination, et al The criterion of breakdown is the break criteria {Current (Contact = "drain" Absval = 1 × 10 −7 )}.…”

Section: Device Structure and Descriptionmentioning

confidence: 99%

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Duan

Luo²,

Yang³

2023

Chinese Phys. B

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A novel Silicon Carbide gate-controlled bipolar field effect composite transistor with polysilicon region (SiC GCBTP) is proposed. Different from the traditional electrode connection mode of SiC VDMOS, the P+ region of P-well is connected with the gate in SiC GCBTP, and the polysilicon region is added between the P+ region and the gate. By this method, additional minority carriers can be injected into the drift region in on-state, and the distribution of minority carriers in the drift region will be optimized, so the on-state current is increased. In terms of static characteristics, it has the same high breakdown voltage (811V) as SiC VDMOS which length of drift is 5.5 μm. The on-state current of SiC GCBTP is 2.47×10-3 A/μm (V G=10V, V D=10V) which is 5.7 times that of SiC IGBT and 36.4 times that of SiC VDMOS. In terms of dynamic characteristics, the turn-on time of SiC GCBTP is only 0.425ns. And the turn-off time of SiC GCBTP is similar to SIC IGBT, which is 114.72ns.

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“…Moreover, the high critical field strength of SiC made it possible to use higher doping in the collector layer. For this reason second breakdown occurs at a very high current density which is well outside the normal operation area of the device [10]. The BJT is also extremely robust with high surge current capability, high temperature performance and high cosmic-ray radiation hardness.…”

Section: Jbs and Mps Diodesmentioning

confidence: 99%

SiC bipolar devices for high power and integrated drivers

Östling

Ghandi

Lanni

et al. 2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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-Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. The first SiC device to reach the market was the unipolar Schottky diode. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now being offered in the voltage range up to 1.2 kV. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available, which has removed one obstacle for the introduction of bipolar devices. The SiC wafer roadmap looks very favorable as volume production takes off. Other advantages of SiC are the possibility of high temperature operation (> 300 °C) and in radiation hard environments, which could offer considerable system advantages. Thanks to the mature SiC process technology, low-power integrated circuits are now also viable. Such circuits could find use in integrated drivers operating at elevated temperatures.

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Analysis of SiC BJT RBSOA

Cited by 9 publications

References 2 publications

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

SiC bipolar devices for high power and integrated drivers

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