Simulation Study on Dynamic and Static Characteristics of Novel SiC Gate-Controlled Bipolar-Field-Effect Composite Transistor

Abstract

In this paper, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied. The structure is characterized by the use of the base-gate short connection mode, instead of the conventional base-source short connection mode in SiC Vertical Double-diffusion MOSFET (VDMOS). It found that the device can obviously improve many problems of SiC Insulated Gate Bipolar transistor (IGBT) caused by the p-type substrates and eliminate the latch-up effect, having very bright prospects in high power and low frequency applications. The dynamic and static characteristics of the SiC GCBT are studied in detail and compared with SiC VDMOS, SiC IGBT and Si IGBT. Through comparative studies, the analysis results indicate that SiC GCBT has superior static characteristics, including a higher breakdown voltage, a relatively smaller threshold voltage (2.98V) and lower on-state voltage drop, and a much larger on-state current which is 28% higher than that of Si IGBT and 71% higher than that of SiC IGBT. In terms of dynamic characteristics, SiC GCBT has the shortest turn-on time, and the turn-off characteristics of the device are also improved compared with SiC and Si IGBT.

The role of power device technology in the electric vehicle powertrain

“…265,266 Moreover, there are other problems related to the formation of semiconductor junctions, doping, and temperature, for example, avalanche breakdown and latch-up effects. [267][268][269] Other aspects should not be overlooked such as high electric fields, transients, gate-oxide degradation, and body diode degradation, which can also cause malfunction and the destruction of discrete devices and power modules. 78,79 4.…”

“…Semiconductor ‐ Figure 16②b: in addition to stress‐related failures when operating above the maximum ratings of current, voltage, and temperature, the main causes of failure of the semiconductor device can be diffusion problems during its manufacturing process, defects in the semiconductor crystal, or the presence of impurities and contaminants in the material 265,266 . Moreover, there are other problems related to the formation of semiconductor junctions, doping, and temperature, for example, avalanche breakdown and latch‐up effects 267‐269 . Other aspects should not be overlooked such as high electric fields, transients, gate‐oxide degradation, and body diode degradation, which can also cause malfunction and the destruction of discrete devices and power modules 78,79 …”

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

“…With the continuous improvement of the calculation model, considering the secondary effects of bipolar transistor amplifier circuit (base region width modulation effect, base region broadening effect, and temperature effect), the third generation of small signal model is put forward to calculate the AC small signal, which has higher accuracy [23]. From the micro-perspective to explore the characteristics of transistor amplifier signal, Gummel-Poon model (G-P) is proposed to establish the connection between the device performance material, structure, and the process parameters [24]. G-P model has three advantages: first, it can directly relate the electrical characteristics of the device to the multi-subcharge in the base region.…”