The role of power device technology in the electric vehicle powertrain

Abstract

Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP

“…Pairing Equations (1) and (4), it can be inferred that the reliability problem of FCP is related to the properties of materials [ 10 , 12 , 22 , 23 , 24 , 25 , 26 ]. For finding the most suitable material, Taguchi’s experimental method was used [ 27 ].…”

Research and analysis of electromagnetic interference of a motor drive control system based on PMSM with SiC MOSFET for new energy electric vehicles

“…In recent years, third-generation semiconductor materials have shown significant advantages in bandgap, electric breakdown field, saturated electron drift velocity, thermal conductivity, and radiation resistance, which further meet the new requirements of high temperature, high power, high voltage, and high frequency in the field of modern electronic technology (Van Do et al, 2021). SiC MOSFETs have higher switching speed, smaller losses, and high temperature working tolerance, which can reduce the size and volume of passive components (such as heat sinks, inductors, and capacitors) to achieve higher power density and efficiency (Alcázar-García and José Luis Romeral, 2022;Robles et al, 2022). Therefore, SiC MOSFETs have been widely predicted to be superior to Si IGBTs as power switch tube devices, which provides a promising solution for the motor drive control system in NEEVs (Gurpinar et al, 2018;Zhu et al, 2018;Wu et al, 2022).…”

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

“…Gallium nitride (GaN) power semiconductor devices have attracted tremendous research attention for the superior material properties such as high critical electric field of 3.3 MV cm −1 , large electron saturation velocity and excellent thermal conductivity. 1,2) Because of the high density and the high mobility for the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface, AlGaN/GaN Schottky barrier diodes (SBDs) have unique advantages of low specific on resistance (R on,sp ) and less lower power losses in highpower-switching applications.…”

“…The increased BV is also supported if the anode FP design is optimized. By using recessed anodes and dual FPs, the AlGaN/GaN SBD can achieve a low R on,sp of 5.12 mΩ cm 2 , a low turn-on voltage of <0.7 V and a high blocking voltage of 1.9 kV. 18) However, the impact of parameters of the FP for AlGaN/GaN SBDs on electrical characteristics lacks comprehensive analysis.…”