Analysis of single-ion multiple-bit upset in high-density DRAMs

Makihara, A.; Shindou, H.; Nemoto, Norio; Kuboyama, S.; Matsuda, Sumio; Oshima, Takayuki; Hirao, Toshio; Itoh, Hisayoshi; Buchner, S.; Campbell, A.B.

doi:10.1109/23.903783

Cited by 45 publications

(9 citation statements)

References 4 publications

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“…The results were not very good, indicating that for the case of 16-Mb DRAMs the standard RPP model may not be valid. This is not surprising given the complicated construction of high-density DRAM cells [13], [14]. The normal incidence data points (except for bromine) were fit with a Weibull function.…”

Section: Laboratory Test Resultsmentioning

confidence: 99%

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SEU measurements and predictions on MPTB for a large energetic solar particle event

Campbell

Buchner²,

Petersen³

et al. 2002

IEEE Trans. Nucl. Sci.

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Single-event upset (SEU) ground testing and rate calculations have been performed for 16-Mb DRAMs flown on the microelectronics and photonics testbed experiment (MPTB) using measured particle spectra and compared with space data from a period of high solar activity. The results show that with the measured spectra, the measurements agree quite well with the calculations. Using just modeled environments, the results do not agree as well.

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Section: Laboratory Test Resultsmentioning

confidence: 99%

“…Average proton spectrum during the period of the Bastille Day event (July[14][15][16][17][18] 2000).…”

mentioning

confidence: 99%

SEU measurements and predictions on MPTB for a large energetic solar particle event

Campbell

Buchner²,

Petersen³

et al. 2002

IEEE Trans. Nucl. Sci.

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“…In particular, SEUs are particularly interesting to study in devices often very vulnerable such as memory arrays; also, their repetitive and dense structure makes memory devices relatively easy to model. Many studies have been conducted regarding all types of memories, with particular emphasis for DRAM [5]- [7] and SRAM [4]- [10]. The device cross section per bit is usually defined as (1) where is the number of bits in the array under study, and is the fluence of a given ion.…”

Section: Introductionmentioning

confidence: 99%

Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays

Cellere

Paccagnella

Visconti

et al. 2007

IEEE Trans. Nucl. Sci.

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Single, high energy, high LET, ions impacting on a Floating gate array on grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Up to 30 consecutive devices can be involved in the trace left by a single ion. We demonstrate that charge collection at multiple nodes can be expected as the technology advances. One of the major implications is that the widely adopted cosine law should be used with great care when dealing with modern devices, with sizes smaller than 100 nm.Index Terms-Floating gate memories, multiple bit upset, single bit upset.

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“…When a memory device is irradiated, this transient current induces memory state inversion (single event upset: SEU) or memory overwrite failure (single event latchup: SEL) [3][4][5]. Moreover, in recent years, multibit SEUs due to irradiation by a single particle have been reported in highdensity memory devices [6,7]; thus, there is a need for further improvement of radiation tolerance in semiconductor devices for space use.…”

Section: Introductionmentioning

confidence: 99%

Heavy‐ion induced current in MOS structure

Takahashi¹,

Shibata²,

Ohnishi³

et al. 2006

Electron Comm Jpn Pt II

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SUMMARYWe studied the mechanism for generation of transient current in MOS structures during heavy-ion irradiation. In heavy-ion (argon, oxygen) irradiation tests on Al gate MOS diodes, we observed irradiation-induced transient current only in bias conditions where the semiconductor surface is in a depletion condition, and found that the peak value was dependent on the applied voltage during irradiation, the oxide film thickness, and the linear energy transfer of heavy ion. In addition, in a comparison of calculation results and test results using a device simulation, we found that a model of the oxide film as a perfectly insulating film can be used to quantitatively explain the test results, and confirmed that the displacement current component of the heavy-ion induced current in the MOS structure transmitted via the oxide film is dominant.

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Analysis of single-ion multiple-bit upset in high-density DRAMs

Cited by 45 publications

References 4 publications

SEU measurements and predictions on MPTB for a large energetic solar particle event

SEU measurements and predictions on MPTB for a large energetic solar particle event

Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays

Heavy‐ion induced current in MOS structure

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