Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolò; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Hove, M. Van; Bisi, Davide; Meneghini, Matteo; Groeseneken, G.; Decoutere, Stefaan

doi:10.1016/j.sse.2014.08.006

Cited by 16 publications

(7 citation statements)

References 20 publications

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“…However, when the V G is above 5 V, the top channel could be connected again, as shown in Figure 6b. In this scenario, the electrons can be transferred from the lateral 2DEG channel in the access region and/or interface below the bottom AlGaN barrier to the interface between the dielectric and the bottom AlGaN barrier [20,21] (Figure 7b). Then, the electrons can be accumulated under the gate dielectric [20,22].…”

Section: Resultsmentioning

confidence: 99%

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Tang

Jiang

2020

Micromachines

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In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (gm)–gate voltage (VG) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive VG. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (VTH) toward an enhancement-mode characteristic.

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Section: Resultsmentioning

confidence: 99%

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Tang

Jiang

2020

Micromachines

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“…The initial stabilization is performed by applying a negative gate voltage (typically -1 V) for 3000 s. During this phase, the virgin device is stabilized by releasing the charges originally contained in trapping centers [22] [23]. It is worth noting that without applying the initial stabilization, positive and negative ΔVth were observed in different samples and in different stress conditions, due to the concomitant charge trapping and releasing during the stress.…”

Section: Methodsmentioning

confidence: 99%

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Acurio

Crupi

Magnone

et al. 2017

Solid-State Electronics

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This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ΔVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1 s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93 eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45 eV and 0.82 eV

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“…It is challenging to densify silicon nitride without sintering aids; thus, choosing a suitable additive for densification is a crucial step. The selection criteria while sintering for sintering aids, in general, are as follows: (1) capable of forming liquid phase to promote densification and crystal phase transition from α-Si 3 N 4 to β-Si 3 N 4 by solution reprecipitation; (2) full or partial crystallization of the liquid phase upon cooling to reduce the proportion of glassy phase at grain boundaries; (3) enough high-temperature strength of grain boundary phase [1]. At present, the usual additives are Y 2 O 3 –Al 2 O 3 , Y 2 O 3 –Nd 2 O 3 , and MgO–SiO 2 [2,3,4,5] for liquid phase formation and good densification.…”

Section: Introductionmentioning

confidence: 99%

Study of the Comparative Effect of Sintering Methods and Sintering Additives on the Microstructure and Performance of Si3N4 Ceramic

et al. 2019

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The Si3N4 ceramics were prepared in this study by gas pressure sintering (GPS) and spark plasma sintering (SPS) techniques, using 5 wt.% Yb2O3–2 wt.% Al2O3 and 5 wt.% CeO2–2 wt.% Al2O3 as sintering additives. Based on the difference in sintering methods and sintering additive systems, the relative density, phase composition, phase transition rate, microstructure, mechanical properties, and thermal conductivity were comparatively investigated and analyzed. SPS proved to be more efficient than GPS, producing higher relative density, bending strength, hardness, and thermal conductivity of Si3N4 ceramic with both additive systems; however, the phase transition rate and fracture toughness were lower. Similarly, higher bending strength, hardness, and thermal conductivity were achieved with Yb2O3–Al2O3 than CeO2–Al2O3 in the case of GPS and SPS, and only the relative density, fracture toughness, and phase transition rate were lower.

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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Cited by 16 publications

References 20 publications

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Study of the Comparative Effect of Sintering Methods and Sintering Additives on the Microstructure and Performance of Si3N4 Ceramic

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