Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

Choudhary, K. K.

doi:10.1016/j.jpcs.2011.11.020

Cited by 19 publications

(12 citation statements)

References 25 publications

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“…Given the above discussion on appearance of magnetic order in LNO/STO hybrid structure, it is quite reasonable to assume that the observed temperature behaviour of resistivity can be attributed to the manifestation of strong long-range spin fluctuations with a characteristic energy hω sf ≃ k B T sf corresponding to low-energy spin dynamics spectrum measured by inelastic neutron scattering experiments. It should be pointed out that a rather significant scattering of conduction electrons by spin fluctuations is well documented for many different materials, see, e.g., [19][20][21][22][23][24][25][26] and further references therein. Recently, we suggested a simple phenomenological model based on the resonant like features of SDW type spectrum which result in the observed universal temperature dependence of the resistivity, see [27] for more discussion.…”

Section: Resultsmentioning

confidence: 99%

Scaling like behaviour of resistivity observed in LaNiO₃thin films grown on SrTiO₃substrate by pulsed laser deposition

Sergeenkov

Cichetto

Zampieri

et al. 2015

J. Phys.: Condens. Matter

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Abstract. We discuss the origin of the temperature dependence of resistivity ρ observed in highly oriented LaN iO 3 thin films grown on SrT iO 3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve3/2 for the entire temperature interval (20K < T < 300K) with T sf (d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaN iO 3 /SrT iO 3 heterostructure.

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Section: Resultsmentioning

confidence: 99%

Scaling like behaviour of resistivity observed in LaNiO₃thin films grown on SrTiO₃substrate by pulsed laser deposition

Sergeenkov

Cichetto

Zampieri

et al. 2015

J. Phys.: Condens. Matter

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“…The electron effective mass, m n * for n-type ZnO is taken as equal to 0.23 m e [ 53 ]. The electron attempts to escape frequency, ν = 8.54 × 10 12 s −1 , is estimated from the relation hν = kT D [ 54 ], where the Debye temperature, T D , for wurtzite ZnO is 410 K [ 55 ], and all other symbols have their common meaning. From Equation (1) it follows that the values of w and qφ t can be determined from the slope of the plot lnJ versus V and the intersection of the extension of this plot toward the lnJ axis at V = 0.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

et al. 2021

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Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

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“…In case of Xe +17 ions with the increasing radiation dose, the conductivity decreases and at fluence greater than (5 × 10 10 ) m −2 ., polyvacancy complexes and amorphous phase nuclei begin to form. As a result, energy barriers between the disordered regions and the conductive surface emerge in the structure [18]. The magnitude of the barrier depends on the radiation dose and is determined by the size and properties of disordered regions, which impede the movement of electrons.…”

Section: Resultsmentioning

confidence: 99%

Information for Readers

Penionzhkevich¹

2017

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This paper presents a case study of targeted modification of the structure and properties of zinc nanotubes ordered arrays by treatment with Xe +22 and Kr +17 swift heavy ions (SHI). Polyethylene terephthalate track-etched membranes (PET TeMs) with a pore density of (4 × 10 9 ) ions/cm 2 have been used as a template for electrochemical deposition of Zn. Scanning electron microscopy and energy dispersive analysis have been used for a comprehensive elucidation of the dimensionality, chemical composition of the synthesized samples. Dynamics of changes in the crystallite shape and orientation of NTs before and after irradiation has been studied by X-ray diffraction. Changes in conductive properties as a result of irradiation were discussed. After Xe +22 ions irradiation with a fluence of (1 × 10 11 ) m −2 or higher, the formation of loose areas in the structure of Zn NTs as a result of partial degradation of the crystal structure and, consequently, a decline in conductivity are observed. In case of Kr +17 ions, the increase in current conduction with the increase in fluence may be due to the increase in the current carriers.

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Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

Cited by 19 publications

References 25 publications

Scaling like behaviour of resistivity observed in LaNiO₃thin films grown on SrTiO₃substrate by pulsed laser deposition

Scaling like behaviour of resistivity observed in LaNiO₃thin films grown on SrTiO₃substrate by pulsed laser deposition

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

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Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

Cited by 19 publications

References 25 publications

Scaling like behaviour of resistivity observed in LaNiO3thin films grown on SrTiO3substrate by pulsed laser deposition

Scaling like behaviour of resistivity observed in LaNiO3thin films grown on SrTiO3substrate by pulsed laser deposition

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

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Scaling like behaviour of resistivity observed in LaNiO₃thin films grown on SrTiO₃substrate by pulsed laser deposition

Scaling like behaviour of resistivity observed in LaNiO₃thin films grown on SrTiO₃substrate by pulsed laser deposition