Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Abstract

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution bladecoating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO 2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm 2 V −1 s −1 , respectively. The devices show an excellent on/off ratio (>10 6 ), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlO x dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm 2 V −1 s −1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm 2 V −1 s −1 ) and IZI-TFTs (over 38 cm 2 V −1 s −1 ) using MO semiconductor layers annealed at 300 °C are achieved.

Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy

“…Post-thermal annealing (PTA) under an oxygen atmosphere has been also used to partially compensate for the oxygen losses from In 2 O 3 . 13,28 Ma and co-workers reported the positive influence of the PTA process on In 2 O 3 -TFTs, 29 which was also suggested earlier by Yeom et al 30 Note that postprocess annealing has been shown to improve the threshold voltage shift, 31 field-effect mobility, 32,33 and channel-to-source/drain metallization interface resistivity. 34−36 The effects of these aforementioned In 2 O 3 thermal treatments on the chemical and electronic structures of the adjacent layers and buried interfaces must also be considered seriously during optimization of the In 2 O 3 -based TFTs.…”

“…Post-thermal annealing (PTA) under an oxygen atmosphere has been also used to partially compensate for the oxygen losses from In 2 O 3 . , Ma and co-workers reported the positive influence of the PTA process on In 2 O 3 -TFTs, which was also suggested earlier by Yeom et al Note that postprocess annealing has been shown to improve the threshold voltage shift, field-effect mobility, , and channel-to-source/drain metallization interface resistivity. − …”

P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability

“…To investigated the influence of Al dopant on oxygen defects of the films, the X-ray photoelectron spectroscopy (XPS) of IZO and IAZO films are executed, as shown in Figure 2(a) and Figure 2(b). The XPS O1s spectra is resolved into two peaks, OI peak at 530 eV and OII peak at 531 eV， and they represent the metal-oxygen bond and oxygen defects, respectively [8]. Table 1 lists area ratio of OI and OII peak, i.e., OI/(OI + OII) and OII/(OI + OII).…”

Printed Thick Film Resistance Temperature Detector for Real-Time Tube Furnace Temperature Monitoring

“…He et al demonstrated this by using electrohydrodynamic printing technology to prepare nanosilver temperature sensors [31]. However, the range of ink viscosity that could be used in this technology was limited, and the temperature resistance of the sensor was only 105 • C. The blade-coating process is not only cost-effective and has a brief preparation cycle [32] but also allows printing on cylindrical surface substrates with large curvatures. For example, Zhao et al demonstrated a platinum-platinum/rhodium thick film thermocouple using blade coating technology, showcasing the method's capability to print on curved surfaces [33].…”