2006
DOI: 10.1088/0268-1242/21/7/009
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Analysis of the band alignment of highly strained indium-rich GaInNAs QWs on InP substrates

Abstract: The focus of this paper is to present the calculations of the band alignment of indium-rich (>53%) highly strained Ga 1−x In x N y As 1−y quantum wells on InP substrates which allows an emission wavelength of the order of 2.3 µm. We concentrate on the band alignment of Ga 0.22 In 0.78 N 0.01 As 0.99 wells lattice matched to In 0.52 Al 0.48 As barriers. Our calculations show that the incorporation of nitrogen into Ga 1−x In x As improves the band alignment significantly allowing Ga 0.22 In 0.78 N 0.01 As 0.99 /… Show more

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Cited by 11 publications
(3 citation statements)
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“…It has been shown previously that the band alignment of GaInNAs on GaAs and InP substrates can be analyzed by means of the model solid theory ignoring the presence of nitrogen in the average valence band energy and taking into account the presence of nitrogen in all other laser parameters. [19][20][21] The calculated results were in agreement with the experimental data. [21] Therefore, we use the model solid theory to calculate the band alignment of GaNAsP alloys on GaP substrates.…”
Section: Model Solid Theorysupporting
confidence: 83%
“…It has been shown previously that the band alignment of GaInNAs on GaAs and InP substrates can be analyzed by means of the model solid theory ignoring the presence of nitrogen in the average valence band energy and taking into account the presence of nitrogen in all other laser parameters. [19][20][21] The calculated results were in agreement with the experimental data. [21] Therefore, we use the model solid theory to calculate the band alignment of GaNAsP alloys on GaP substrates.…”
Section: Model Solid Theorysupporting
confidence: 83%
“…Band anticrossing model (BAC) is proposed to explain this unusual behaviour. It has been reported that the BAC model [2] can be used to describe the composition dependence of the band gap energy of GaInAsN on GaAs substrates [3]. According to the model, there is an interaction between localized nitrogen states and the extended conduction band (CB) states which leads to a splitting of the CB into two states.…”
Section: Introductionmentioning
confidence: 99%
“…Our calculations confirm also that (i) refractive index of GaInNAs is greater than that of III-V semiconductors, and (ii) refractive index increases with increasing N concentration in GaInNAs alloys. We have previously shown [6,7] that conventionally-and strain-compensated N-based lasers have better band alignment than that of the III-V semiconductor laser systems. Although band offsets of III-N-V systems are close to that of the ideal case leading to have an improved carrier confinement, the optical confinement of III-N-V laser system is worse than that of the 1.3 µm III-V laser systems.…”
mentioning
confidence: 99%