Analysis of the Breakdown Voltage of an Area Surrounded by the Multi-trench Gaps in a 4kV Monolithic Isolator for a Communication Network Interface

Abstract

We analyzed the conditions to improve the dielectric breakdown voltage in the area surrounded by the buried oxide (BOX) film and the buried multiple trench gaps on the SOI substrate surface. We use an impedance model and determine the conditions to improve the breakdown voltage. One is to increase the impedance of the BOX, The other one is to reduce the impedance of the trench gaps. We confirmed them by simulation and the experimental results.