Microbubbles are very fine bubbles that shrink and collapse underwater within several minutes, leading to the generation of free radicals. Electron spin resonance spectroscopy (ESR) confirmed the generation of hydroxyl radicals under strongly acidic conditions. The drastic environmental change caused by the collapse of the microbubbles may trigger radical generation via the dispersion of the elevated chemical potential that had accumulated around the gas–water interface. The present study also confirmed the generation of ESR signals from the microbubble-treated waters even after several months had elapsed following the dispersion of the microbubbles. Bulk nanobubbles were expected to be the source of the spin-adducts of hydroxyl radicals. Such microbubble stabilization and conversion might be caused by the formation of solid microbubble shells generated by iron ions in the condensed ionic cloud around the microbubble. Therefore, the addition of a strong acid might cause drastic changes in the environment and destroy the stabilized condition. This would restart the collapsing process, leading to hydroxyl radical generation.

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In this paper, we demonstrate newly developed process technology to fabricate complementary metal-oxide-silicon field-effect transistors (CMOSFETs) having atomically flat gate insulator film/silicon interface on (100) orientated silicon surface. They include 1,200 C ultraclean argon ambient annealing technology for surface atomically flattening and radical oxidation technology for device isolation, flatness recovery after ion implantation, and gate insulator formation. The fabricated CMOSFET with atomically flat interface exhibit very high current drivability such as 923 and 538 mA/mm for n-channel MOSFET (nMOS) and p-channel MOSFET (pMOS) at gate length of 100 nm when combined with very low resistance source and drain contacts, four orders of magnitude lower 1= f noise characteristics when combined with damage free plasma processes, and one decade longer time dependent dielectric breakdown (TDDB) lifetime in comparison to devices with a conventional flatness. The developed technology effectively improves the performance of the silicon-based CMOS large-scale integrated circuits (LSI).