Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET

Shenoy, P.M.; Bhalla, Aman; Dolny, G.

doi:10.1109/ispsd.1999.764069

Cited by 138 publications

(47 citation statements)

References 3 publications

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“…La diminution de la taille de cellule élémentaire permet une augmentation du dopage de l'épitaxie N. Cette augmentation s'accompagne d'un équilibrage des charges plus difficile à garantir : Shenoy et al ont résumé les limites de la Superjonction en ce sens [54]. La tenue en tension est déterminée, non pas par le déséquilibre relatif des charges entre les colonnes, mais par la différence de quantité de charges.…”

Section: Ii32 Choix Entre Les Deux Structures à Superjonctionunclassified

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Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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Section: Ii32 Choix Entre Les Deux Structures à Superjonctionunclassified

“…Nous avons donc choisi d'étudier l'impact du déséquilibre des charges pour plusieurs concentrations N D de la couche épitaxiée N. En effet, si plusieurs études ont déjà été effectuées sur le déséquilibre des charges [54], il nous semblait important de quantifier la dégradation de BV DSS dans notre cas précisément.…”

Section: Paramètre Désignation Valeurunclassified

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Théolier

2010

E.J.E.E

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“…the excess charge in the n-column is counter balanced by the adjacent charges in the p-column. It is already known that the device BV is sensitive to charge imbalance in both ON and OFF states [3]- [5]. The literature discussion is on deep trench p-pillar for forming SJ VDMOSFET [6,7].…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics comparison between process and device structures of super junction VDMOS

Naugarhiya

Kondekar

2013

2013 International Conference on Control, Automation, Robotics and Embedded Systems (CARE)

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In this paper, comparative study and discussion of electrical characteristic for simulated process structure and device structure of super junction (SJ) Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) is done. The process SJ structure has breakdown voltage (BV ) around 600V and device structure has slightly higher BV around 650V.The SJ VDMOS process structure and device structure have area specific on resistances Ron 38mO and 42mO respectively. The speciality of proposed process SJ VDMOS is that it has trench p-pillar that simplify the fabrication process steps and reduces device fabrication cost.

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“…The addition of the P column modifies the depletion process and the electric field distribution. The highest V bd is reached when a charge balance (CB) of both N and P columns is set [1,2,3].…”

Section: Introductionmentioning

confidence: 99%

Capacitive behaviour in Super Junction trench MOSFET devices

Villamor

Cortés

Flores

et al. 2011

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

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Abstract-This paper exploits for the first time the capacitive behaviour of Super Junction (SJ) Trench Power MOSFETs as a characterization method to determine their Charge Balance (CB). Differently from blocking voltage methods, the capacitive method allows the CB extraction in 800 V SJ devices by using low voltage systems (<30 V) to extract the drain-source capacitance (C ds ) in function of the drain-source voltage (V ds ). Hence, the device-under-test is never stressed in avalanche, avoiding device degradation and/or destruction. The correlation between the minimum C ds value at 25 V and the optimum CB is demonstrated by TCAD simulations and measurements. As a result, the highest breakdown voltage (V bd ), corresponding to the optimum CB, is determined by measuring C ds at 25 V. Moreover, the maximum V ds pinch voltage (V pinch ) exhibits a maximum value when C ds at 25 V is minimum, thus also being an interesting parameter to monitor.

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Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET

Cited by 138 publications

References 3 publications

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

Electrical characteristics comparison between process and device structures of super junction VDMOS

Capacitive behaviour in Super Junction trench MOSFET devices

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