Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

Pan, Shijie; Feng, Shiwei; Li, Xuan; Zheng, Xiu Cheng; Lu, Xiaozhuang; Hu, Chaoxu; Shao, Guojian; Lin, Gang

doi:10.1109/ted.2021.3089449

Cited by 6 publications

(1 citation statement)

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“…Besides, the traps with similar energy level have also been identified using the DLTS measurement with a negative gate bias [42,43], which was related with the depth of surface states from the conduction band probably due to the electron hopping between surface states [36,42]. In addition, the traps with energy level close to 0.48 eV were reported to be located in the AlGaN barrier layer using DLTS [34,38,45,48] and other techniques [10,13,49]. The traps in the AlGaN barrier were also observed using DLTS with the peak presented at 300 K [45], which was similar to our results in figure 5(a).…”

Section: T-independent Gan Buffermentioning

confidence: 83%

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Pan¹,

Feng²,

Li³

et al. 2022

Semicond. Sci. Technol.

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This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors (HEMTs) based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the drain voltage transients at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

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