Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature

Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

“…ZnSe films, therefore, have several potential applications in electrooptics devices [1,2], optical coatings, thin film transistors and heterojunction solar cells [3]. At present CdS is the most extensively used buffer layer material for solar cells.…”

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

“…The current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of these devices have been extensively studied and reported in the literature for more than four decades because of simplicity in the fabrication [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. In these devices, different current-transport mechanisms may dominate the others at a certain temperature and voltage regions, such as thermionic emission (TE), thermionicfield emission (TFE), field emission (FE), recombination tunneling via interface states or dislocations, minority carrier injection, recombination and multi-step tunneling.…”

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

“…The temperature dependence of electrical characteristics of these devices has been widely investigated in the literature [35][36][37][38][39][40][41][42][43][44][45][46]. In our previous work [20], we have investigated temperature and voltage dependent current transport mechanisms in GaAs/AlGaAs single-quantum-well lasers using forward and reverse bias I-V measurements in the temperature range of 80-360 K. The analysis of the experimental I-V data of the studied structures indicated that the current-transport was controlled by the Thermionic Field-Emission (TFE) mechanism below 170 K and Thermionic Emission (TE) mechanism above 200 K. The high values of n especially at low temperatures showed that the conduction is controlled by TFE [7,20].…”