Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

Ashraf, Muhammad Waseem; Akhtar, S. M. Javed; Khan, Abdul Faheem; Ali, Zulfiqar; Qayyum, A.

doi:10.1016/j.jallcom.2010.11.032

Cited by 127 publications

(46 citation statements)

References 29 publications

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“…Figure 4 shows that in this sample the intensity of main reflection for the SnS (130) plane at 31.6°increases with the annealing temperature, and the film exhibited stronger preferred orientation and became more crystalline, which is in agreement with previous studies [13], as a result of the removal of residual stresses/microstrain formed during deposition of the films, as shown in Fig. 5 and presented in Table 3, a similar observation has been made by other workers [21].…”

Section: X-ray Diffractionsupporting

confidence: 91%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Section: X-ray Diffractionsupporting

confidence: 91%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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“…For instance Ashraf et al. [14] reported that the crystalline quality of the films was found to increase with the increase of the annealing temperature. Optical studies revealed that the energy band-gap and refractive index increases with the increase of the annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

et al. 2013

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Thin films of Zn 1−x Cu x Se (x= 0.00, 0.05, 0.10, 0.15, 0.20) were grown on glass substrates by closed space sublimation technique. The deposited films were annealed at 200 • C and 400 • C in air for 1 h. The annealed samples have been investigated through Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), spectroscopic ellipsometer, spectrophotometer and Raman spectroscopy. Through RBS, the composition of the films was calculated and compared with the initial concentration. Structural characterization including crystal structure, crystal orientation, lattice parameter, grain size, strain and dislocation density were carried out using XRD data. From XRD spectra it was revealed that the as-deposited and annealed films were polycrystalline in nature with zinc-blende structure. However, the crystallinity and the grain size were improved with the increase of annealing temperature. According to Raman spectroscopy, it was observed that as deposited and annealed samples have the same characteristic vibrational modes of ZnSe at low and high frequency optical phonon modes while another mode was observed for 400 • C annealed samples at 745 cm −1 . Spectroscopic ellipsometer has been used to found annealing effect on the optical properties of ZnSe. The band gap energy has been determined using transmission spectra. It was found that the band gap energy of the film increased with the increase of annealing temperature.

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“…Also, the lms showed a shift in the absorption edge towards shorter wavelength with increasing annealing power for both of transmittance and reectance. This shift could be attributed to the structural changes in the lm with the annealing process [38]. …”

Section: Methodsmentioning

confidence: 99%

Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films

2015

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Samples of ZnSe of the same lm thickness (320 nm) have been thermally evaporated on unheated quartz substrates using high purity powder. The prepared lms were subjected to pulsed laser annealing of two dierent powers. X-ray diraction studies revealed that the as-deposited samples were polycrystalline cubic (zinc-blende type) structure. As the annealing power increases, the crystallinity of ZnSe lms was improved with preferential orientation along the (111) direction parallel to the substrate surface. Microstructural characterizations have been evaluated using the DebyeScherrer formula. The absorption coecient as well as the energy gap for the asdeposited and the annealed samples were also reported.

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Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

Cited by 127 publications

References 29 publications

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films

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