Analysis of the electrical conduction using an iterative method

Dziuba, Z.; Górska, M.

doi:10.1051/jp3:1992258

Cited by 38 publications

(23 citation statements)

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“…To solve this problem the magnetic field dependences of the magnetoresistance and Hall resistance at 295 K were measured and MSA was applied. MSA was proposed by Beck and Anderson, 7 and was further developed by Dziuba et al, 8 by Antoszewski et al, 9 by Vurgaftman et al, 10 and by Kiatgamolchai et al 11,12 as a useful technique for analyzing multi-carrier galvanomagnetic phenomena. MSA is the transformation of the electrical conductivity tensor versus the magnetic field into the conductivity density versus the mobility spectrum.…”

mentioning

confidence: 99%

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

Myronov

Irisawa

Mironov

et al. 2002

Applied Physics Letters

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confidence: 99%

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

Myronov

Irisawa

Mironov

et al. 2002

Applied Physics Letters

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“…Dziuba and Gorska [3] first produced an iterative algorithm for doing so and this was succeeded by QMSA [4] involving GaussSeidel like iterations. A proprietary algorithm, i-QMSA [5], sought to improve QMSA by minimising error by adjusting one field point at a time.…”

Section: Mobility Spectrum Analysis (Msa)mentioning

confidence: 99%

Multicarrier analysis of magnetotransport data at low and high electric fields

Murthy

Venkataraman

2009

Phys. Status Solidi (c)

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We present some results on multicarrier analysis of magnetotransport data. Both synthetic as well as data from narrow gap Hg0.8Cd0.2Te samples are used to demonstrate applicability of various algorithms vs. nonlinear least square fitting, Quantitative Mobility Spectrum Analysis (QMSA) and Maximum Entropy Mobility Spectrum Analysis (MEMSA). Comments are made from our experience on these algorithms, and, on the inversion procedure from experimental R/σ‐B to S‐μ specifically with least square fitting as an example. Amongst the conclusions drawn are: (i) Experimentally measured resistivity (Rxx, Rxy) should also be used instead of just the inverted conductivity (σxx, σxy) to fit data to semiclassical expressions for better fits especially at higher B. (ii) High magnetic field is necessary to extract low mobility carrier parameters. (iii) Provided the error in data is not large, better estimates to carrier parameters of remaining carrier species can be obtained at any stage by subtracting highest mobility carrier contribution to σ from the experimental data and fitting with the remaining carriers. (iv)Even in presence of high electric field, an approximate multicarrier expression can be used to guess the carrier mobilities and their variations before solving the full Boltzmann equation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The experimental Hall coefficient and resistivity are related to the components of the conductivity tensor through the following relations: (2) where B is the applied magnetic field in the z direction. For a sample involving more than one type of carrier, the conductivity-tensor components can be expressed as a sum over the m species present within the multicarrier system: 3,5 (…”

Section: Multicarrier Systems and Mcf Proceduresmentioning

confidence: 99%

“…Equation 3 is thus rewritten in integral form: 4 (4) The goal is to determine the hole and electron conductivity-density functions (i.e., the mobility spectra) given by (5) where p(µ) and n(µ) are the hole and electron concentration-density functions, respectively. However, the measured σ xx (B) and σ xy (B) do not uniquely define the density functions.…”

Section: First Algorithmmentioning

confidence: 99%

Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures

Antoszewski

Faraone

Vurgaftman

et al. 2004

Journal of Elec Materi

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For modern semiconductor heterostructures containing multiple populations of distinct carrier species, conventional Hall and resistivity data acquired at a single magnetic field provide far less information than measurements as a function of magnetic field. However, the extraction of reliable and accurate carrier densities and mobilities from the field-dependent data can present a number of difficult challenges, which were never fully overcome by earlier methods, such as the multicarrier fit, the mobility-spectrum analysis of Beck and Anderson, and the hybrid mixed-conduction analysis. More recently, to overcome the limitations of those methods, several research groups have contributed to development of the quantitative mobility-spectrum analysis (QMSA), which is now available as a commercial product. The algorithm is analogous to a fast Fourier transform in that it transforms from the magneticfield (B) domain to the mobility (µ) domain. The QMSA converts the fielddependent Hall and resistivity data into a visually meaningful transformed output, comprising the conductivity density of electrons and holes in the mobility domain. In this article, we apply QMSA to both synthetic and real experimental data that are representative of modern multilayer HgCdTe structures. We discuss such features as the accuracy of the extraction of individual layer conductivities and average mobilities, reconstruction of the carrier mobility distribution within a particular layer, the resolution of two carriers with similar mobilities, and limits of the sensitivity.

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Analysis of the electrical conduction using an iterative method

Cited by 38 publications

References 0 publications

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

Multicarrier analysis of magnetotransport data at low and high electric fields

Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures

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