Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

Mangin, L.; Rochette, F.; Lobre, C.; Ballet, P.; Duvaut, P.; Chorier, A.; Polge, B.; Santailler, Jean‐Louis; Ghibaudo, G.

doi:10.1007/s11664-019-07253-z

Cited by 11 publications

(2 citation statements)

References 20 publications

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“…Important for estimations the values of built-in potentials, which defines the sign of band-bending in metal/MCT structures in the Schottky-Mott model and a work function of a semiconductor, are the electron affinity data. The strong composition dependence of the electron affinity for HgCdTe semiconductors obtained when fitting CdTe/HgCdTe MIS structures characteristics is as follows [40,41]:…”

Section: Cr(mo Ti)/hg 1-x CD X Te Contactsmentioning

confidence: 99%

Ohmic metal/Hg_1-xCd_xTe (x ≈ 0.3) contacts

Sizov

Tsybrii

Apatska

et al. 2020

Semicond. Sci. Technol.

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Some technological features of p-type Hg 1-x Cd x Te (x ≈ 0.3) liquid phase epitaxy layers grown on Cd 1-y Zn y Te (y ≈ 0.04) substrates are briefly discussed. Energy dispersive analysis of mercury-cadmium-telluride (MCT) layers and metal contacts (Au(In)/Cr(Mo,Ti)) to MCT layers together with their current-voltage characteristics at T ≈ 80 and 300 K are considered. It is shown that Cr(Mo,Ti)/MCT contacts have ohmic characteristics or close to them at T ≈ 80 and 300 K for both n- and p-type MCT layers. This gives the opportunity to form ohmic contacts to n- and p-type pads in one technological cycle. The contact resistance Rc is much smaller as compared to the HgCdTe p-n junction resistance R0[ RcA (< 10–2 Ω cm2) ≪ R0A (> 103 Ω cm2), where R0 is the zero bias diode resistance at T = 80 K, and A is the MCT (x ≈ 0.3) junction area]. So, such contacts are appropriate for the fabrication of photovoltaic HgCdTe detectors.

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Section: Cr(mo Ti)/hg 1-x CD X Te Contactsmentioning

confidence: 99%

Ohmic metal/Hg_1-xCd_xTe (x ≈ 0.3) contacts

Sizov

Tsybrii

Apatska

et al. 2020

Semicond. Sci. Technol.

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show abstract

“…Passivation of the surface of a narrow-gap MCT is a necessary technological operation to ensure the operability of FPAs based on it. For this purpose, wide-gap ZnS or CdTe layers, 7 Al2normalO3 layers, 8 or SiO2/Si3normalN4 dielectric layers 3 are usually used. The interface properties of such coatings with the narrow-gap MCT also change when exposed to temperature annealing 9 .…”

Section: Introductionmentioning

confidence: 99%