Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Effect of passivation coating on the HgCdTe heterostructures stability at elevated storage temperature

“…Passivation of the surface of a narrow-gap MCT is a necessary technological operation to ensure the operability of FPAs based on it. For this purpose, wide-gap ZnS or CdTe layers, 7 Al2normalO3 layers, 8 or SiO2/Si3normalN4 dielectric layers 3 are usually used. The interface properties of such coatings with the narrow-gap MCT also change when exposed to temperature annealing 9 .…”