Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe

Cui, Ailiang; Sun, Chao; Wang, Fang; Yu, Zhenhua

doi:10.1016/j.infrared.2021.103667

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…Due to the good self-cleaning effect of ALD films on the surface of III-V materials (GaAs), this technique has been widely used for III-V material passivation [3][4][5][6][7]. The study of Al2O3 as a passivation layer for photovoltaic applications was first the samples without the passivation layer [10].…”

Section: Introductionmentioning

confidence: 99%

Passivation of InSb photodetectors with atomic layer deposited Al2O3

Cui¹,

Zhu²,

Ji³

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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The preparation of surface passivation layers on InSb is essential in the process of device fabrication. An Al2O3 passivation film was deposited on the surface of medium wave InSb film by atomic layer deposition (ALD). A series of variable area photodiode devices with different P/A ratios were fabricated. The performance of the device is characterized at 77K. The effects of ALD Al2O3 and anodic oxidation on the leakage current of diode devices were investigated. The surface leakage current of the passivated photodetectors was reduced by an order of magnitude over the anode sulfidation passivated photodetectors. Moreover, the metal-insulator-semiconductor (MIS) device were developed respectively, and the effects of different films as a dielectric layer on the interfacial characteristics were investigated.

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Section: Introductionmentioning

confidence: 99%

Passivation of InSb photodetectors with atomic layer deposited Al2O3

Cui¹,

Zhu²,

Ji³

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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“…Пассивация поверхности КРТ, как правило, осуществляется диэлектриком либо широкозонным полупроводником, наносимым методами физического либо химического осаждения из газовой фазы [4][5][6][7][8][9], однако такие методы, во-первых, зачастую сопровождаются нагревом подложки в вакууме, а во-вторых, могут приводить к физическому перемешиванию и химическому взаимодействию осаждаемого материала с КРТ. Работы по развитию или поиску и исследованию новых методик пассивации CdHgTe остаются актуальными до сих пор [10][11][12][13][14][15][16][17].…”

Section: Introductionunclassified

Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Закиров¹,

Кеслер²,

Сидоров³

et al. 2022

Физика И Техника Полупроводников

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Capacitance−voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with and without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma (with the resulting oxide thickness of 2 nm) have been studied. The obtained structures reveal the positive fixed charge with a density of ∼ (1−6) · 10^11 cm^(−2). The ratio between a slow surface states density and a surface band gap width is almost independent on graded-gap layer presence, with the value of ∼ (4−8) · 10^11 cm^(−2) · eV^(−1). The proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence of fast surface states. Films of CdHgTe grown without the graded-gap surface layer are proved to be much more sensitive to the process of oxidation in glow discharge plasma.

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“…However, such methods, first, often involve substrate heating in vacuum and, second, may lead to physical mixing and chemical interaction between the deposited material and MCT. The research into refinement of the existing CdHgTe passivation techniques and development and characterization of new ones still remains topical [10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Studying C-V characteristics of MIS structures with ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- on n- and p-CdHgTe stabilized with ultra-thin native oxide

et al. 2022

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Capacitance--voltage characteristics of metal dielectric semiconductor structures with atomic layer deposition Al2O3 on n- and p-Cd0.22Hg0.78Te (with and without a surface graded-gap layer) preliminary oxidized in oxygen glow discharge plasma (with the resulting oxide thickness of 2 nm) have been studied. The obtained structures reveal the positive fixed charge with a density of ~(1-6)·1011 cm-2. The ratio between a slow surface states density and a surface band gap width is almost independent on graded-gap layer presence, with the value of ~(4-8)·1011 cm-2·eV-1. The proposed passivation approach provides near-ideal low-frequency capacitance-voltages characterized by weak influence of fast surface states. Films of CdHgTe grown without the graded-gap surface layer are proved to be much more sensitive to the process of oxidation in glow discharge plasma. Keywords: mercury cadmium telluride, film, surface states, plasma.

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Electrical properties of plasma-free ultra-low-temperature ALD ZnS passivation on p-type HgCdTe

Cited by 7 publications

References 27 publications

Passivation of InSb photodetectors with atomic layer deposited Al2O3

Passivation of InSb photodetectors with atomic layer deposited Al2O3

Анализ вольт-фарадных характеристик МДП-структур с ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на n- и p-CdHgTe, стабилизированном сверхтонким собственным оксидом

Studying C-V characteristics of MIS structures with ALD Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- on n- and p-CdHgTe stabilized with ultra-thin native oxide

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