1988
DOI: 10.1049/ip-j.1988.0024
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Analysis of the influence of dark current on the performance of optical receivers employing superlattice APDs

Abstract: Formulas are derived for the effective mean value and effective excess-noise factor associated with dark-current induced holeelectron pairs and these are used to study the influence of dark current, and residual hole ionisation on device and receiver performance for superlattice avalanche photodiodes (APDs). The analyses should provide useful guidelines for the design of high performance superlattice APDs and receivers.

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Cited by 7 publications
(7 citation statements)
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“…O'Reilly [28] expanded this framework to include analytical models of the gain and excess noise statistics of two-carrier ionization originating from arbitrary discrete locations in a cascaded discrete-gain-stage multiplier.…”
Section: B Random Spatial Origination Of Dark Ionization Chainsmentioning
confidence: 99%
See 1 more Smart Citation
“…O'Reilly [28] expanded this framework to include analytical models of the gain and excess noise statistics of two-carrier ionization originating from arbitrary discrete locations in a cascaded discrete-gain-stage multiplier.…”
Section: B Random Spatial Origination Of Dark Ionization Chainsmentioning
confidence: 99%
“…The number of possible occurrences an electron originating at the j th gain stage can ionize while moving to the n + contact is J -j, and the number of possible ionizations the initiating hole can undergo as it drifts to the p + contact is j -1. The average gain, <m j >, associated with the electron-hole pair initiating at each stage is thus given by [28] < m j >= M J…”
Section: B Random Spatial Origination Of Dark Ionization Chainsmentioning
confidence: 99%
“…O'Reilly and Fyath address the issue of multiplied shot noise on dark current generated throughout the multiplier of an APD by finding an effective excess noise factor that gives the correct variance when applied to the gain-normalized terminal dark current. That is, they treat the dark current as though primary dark current were generated in the absorber, subject to the same gain as the photocurrent [14]. However, approximating the dark current pulse height distribution as a Gaussian distribution with a variance determined by O'Reilly's effective F does not work well for single primary carrier injection.…”
Section: A Multiplied Signal In An Scm Apdmentioning
confidence: 99%
“…To achieve high gain and low excess noise, superlattice, graded-gap and staircase APDs [11], [12], [13], [14] have been proposed. These APD designs generally use multiple, discrete heterostructured gain stages to promote preferential ionization of one carrier over the other, so that significant enhancement of the effective hole-electron ionization ratio, k, is made possible.…”
mentioning
confidence: 99%
“…In a reverse biased p-i-n junction diode, dark current is generally due to generation-recombination events occuring within the depletion region of the diode. O'Reilly et al [38] and Fyath et al [39] have examined the noise performance of APDs with the inclusion of the dark current. Due to the fact that thermally generated EHPs can arise at any spatial location within the device, the randomness of the collected current is thereby increased.…”
Section: ) Andmentioning
confidence: 99%