Analysis of the light-extraction efficiency of SiC substrate-based flip-chip vertical light-emitting diodes with embedded photonic crystals

Li, Meng; Li, Kang; Kong, Fanmin; Zhao, Jia; Zhao, Shuyun; Meng, Haotian

doi:10.7567/jjap.55.112101

Cited by 3 publications

(3 citation statements)

References 34 publications

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“…The LEE of the LED was greatly improved thanks to the alternating introductions of embedded PC structures that were scattered across the n-GaN layer. 114 The structure is schematically shown in Figure 36A. It can be seen in Figure 32B-D that a 20% LEE enhancement was accomplished by determining the optimal parameters of the PC.…”

Section: 22mentioning

confidence: 99%

“…conducted research and design work on a vertical chip LED that was produced on a substrate made of SiC. The LEE of the LED was greatly improved thanks to the alternating introductions of embedded PC structures that were scattered across the n‐GaN layer 114 . The structure is schematically shown in Figure 36A.…”

Section: Different Phc Structures To Improve the Optoelectronic Perfo...mentioning

confidence: 99%

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Design of photonic crystals for light‐emitting diodes

Wang,

Dong,

et al. 2023

J Am Ceram Soc.

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Photonic crystals (PC) can greatly enhance the optoelectronic performance of LEDs, due to their distinctive color and photonic band gap, etc. Therefore, many scholars have conducted extensive research based on the high light extraction efficiency, good monochromaticity, and other excellent optoelectronic properties of PC LEDs. This review discusses the main principles of photonic crystals to improve the optoelectronic performance of LEDs and summarizes 12 structural applications of photonic crystal LEDs, such as PC slabs, Bragg grating, Backside reflectors, Surface PC, Embedded PC, Dual PC, PC beads, CPC, PC thin films, LIPC, defective PC, composite architectures with other materials that boost LED optoelectronic qualities. In summary, it is found that photonic crystals can not only greatly improve the light extraction efficiency of LEDs but also improve other optoelectronic properties such as luminescent color, and directional radiation angle, and reduce the manufacturing cost of LEDs. Photonic crystal LEDs are expected to be a strong candidate for future lighting technology Finally, the prospects and challenges of PC LEDs are summarized.This article is protected by copyright. All rights reserved

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Section: 22mentioning

confidence: 99%

Section: Different Phc Structures To Improve the Optoelectronic Perfo...mentioning

confidence: 99%

Design of photonic crystals for light‐emitting diodes

Wang,

Dong,

et al. 2023

J Am Ceram Soc.

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“…Silicon carbide (SiC) is an extremely useful semiconductor material which has already found applications in light-emitting diodes (LEDs) [1], detectors [2], and power devices [3] that operate at high temperatures and/or high voltages. SiC is also an excellent substrate for growing GaN-based materials [4] and, most importantly, for preparing wafer-scale epitaxial graphene using the high-temperature sublimation technique [5]. Therefore, it is possible to prepare not only low-dimensional graphene-based electronic devices [5] but also high-power devices [3], LEDs [1], and GaN-based high-electron mobility transistors (HEMTs) [6] on the same SiC substrate.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

et al. 2019

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Silicon carbide (SiC) has already found useful applications in high-power electronic devices and light-emitting diodes (LEDs). Interestingly, SiC is a suitable substrate for growing monolayer epitaxial graphene and GaN-based devices. Therefore, it provides the opportunity for integration of high-power devices, LEDs, atomically thin electronics, and high-frequency devices, all of which can be prepared on the same SiC substrate. In this paper, we concentrate on detailed measurements on ultralow-density p-type monolayer epitaxial graphene, which has yet to be extensively studied. The measured resistivity ρxx shows insulating behavior in the sense that ρxx decreases with increasing temperature T over a wide range of T (1.5 K ≤ T ≤ 300 K). The crossover from negative magnetoresistivity (MR) to positive magnetoresistivity at T = 40 K in the low-field regime is ascribed to a transition from low-T quantum transport to high-T classical transport. For T ≥ 120 K, the measured positive MR ratio [ρxx(B) − ρxx(B = 0)]/ρxx(B = 0) at B = 2 T decreases with increasing T, but the positive MR persists up to room temperature. Our experimental results suggest that the large MR ratio (~100% at B = 9 T) is an intrinsic property of ultralow-charge-density graphene, regardless of the carrier type. This effect may find applications in magnetic sensors and magnetoresistance devices.

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Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

Liu,

Zheng

2024

Electronics

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Low light extraction efficiency (LEE) remains a critical bottleneck in the performance of contemporary micro-light-emitting diodes (micro-LEDs). This study presents an innovative approach to improve the LEE of Gallium nitride (GaN)-based thin-film flip-chip (TFFC) micro-LEDs by integrating an inclined sidewall with photonic crystals (PhCs). Three-dimensional finite-difference time-domain (FDTD) simulations reveal that the inclined sidewall design significantly increases the escape probability of light, thereby improving LEE. Additionally, the PhCs’ structure further improves LEE by enabling more light to propagate into the escape cones through diffraction. Optimal results are achieved when the inclined sidewall angle (θ) is 28° and the PhCs exhibit a period (a) of 220 nm, a filling factor (f) of 0.8, and a depth (d) of 3 μm, resulting in a maximum LEE of 36.47%, substantially surpassing the LEE of conventional planar TFFC micro-LEDs. These results provide valuable design guidelines for the development of high-efficiency GaN-based micro-LEDs.

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Analysis of the light-extraction efficiency of SiC substrate-based flip-chip vertical light-emitting diodes with embedded photonic crystals

Cited by 3 publications

References 34 publications

Design of photonic crystals for light‐emitting diodes

Design of photonic crystals for light‐emitting diodes

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

Improving the Light Extraction Efficiency of GaN-Based Thin-Film Flip-Chip Micro-LEDs through Inclined Sidewall and Photonic Crystals

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