Analysis of the mobility of printed organic p-channel transistors depending on the transistor geometry and orientation

Spiehl, Dieter; Pankalla, Sebastian; Glesner, Manfred; Doersam, Edgar

doi:10.1088/1742-6596/345/1/012013

Cited by 5 publications

(1 citation statement)

References 5 publications

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“…Kwon et al demonstrated the effects of different channel widths on V Th and performed mobility calculations for 6,13-Bis(triisopropylsilylethynyl)-pentacene-based OTFTs fabricated on Si/SiO 2 substrates using different source and drain contacts [29]. Spiehl et al compared flexographically printed and spin-coated semiconductor layers with different transistor geometries and studied the morphologies of the semiconductor films responsible for mobility variation in OTFT devices [30]. For inkjet-printed flexible OTFTs, the mechanisms that control the channel width effects that impact OTFT and PMOS device characteristics are not yet well understood.…”

Section: Introductionmentioning

confidence: 99%

Flexible low-voltage organic thin-film transistors and PMOS inverters: the effect of channel width on noise margin

Singh¹,

Matsui²,

Tokito³

2021

J. Phys. D: Appl. Phys.

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Low-operating-voltage (<2 V) organic thin-film transistors (OTFTs) and P-channel metal-oxide-semiconductor (PMOS) inverter circuits are fabricated on a 125 µm-thick flexible polyethylene naphthalate substrate using a blend of 2,7-dihexyl-dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene and polystyrene as an active p-type organic semiconducting material. All three electrodes (gate, source, and drain) are inkjet-printed, while the active semiconducting material is deposited by a dispenser system to achieve a saturation mobility of 0.32 cm2 V−1 s−1 at V GS = −2 V. Two different PMOS inverters are fabricated, for which the signal gain peak values are resolved for an ultra-low supply voltage, V DD = −0.5 V. We achieve a signal gain of 2.73 at V DD = −0.5 V. The effect of channel width is demonstrated for both OTFTs and PMOS devices. The ‘on’ current increases with channel width, and the switching point of the PMOS inverters shifts toward the middle of the voltage transfer characteristics, and hence improves the noise margin.

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Section: Introductionmentioning

confidence: 99%

Flexible low-voltage organic thin-film transistors and PMOS inverters: the effect of channel width on noise margin

Singh¹,

Matsui²,

Tokito³

2021

J. Phys. D: Appl. Phys.

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Improved contact resistivity and intra-die variation in organic thin film transistors

Pankalla

Spiehl

Sauer

et al. 2013

Applied Physics Letters

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We studied the processing-related influence on contact resistivity of organic thin-film transistors in top gate architecture which are placed and oriented differently over flexible substrates. Appropriate plasma treatment reduces degradation of the source and drain contacts, increases effective contact surface for self-assembled monolayer treatment, and thus better injection. Increasing the semiconductor film thickness reduces the contact resistivity until a certain critical thickness. By these means, the contact resistivity has been reduced by two orders of magnitude. We did a mass characterisation of 366 solution-processed transistors on six samples that lead to a modified transfer line method in which we permutated the transistors to extract the contact resistivities. Thus, the intra-die dependency of the contact resistivity on the distance from the centre of the sample, the orientation of the transistor, its width, the pre-processing of the samples and on the semiconductor layer thickness has been analysed. These results serve as an evaluation of appropriate processes for printed organic transistors.

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Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

Spiehl

Häming

Sauer

et al. 2015

IEEE Trans. Electron Devices

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Analysis of the mobility of printed organic p-channel transistors depending on the transistor geometry and orientation

Cited by 5 publications

References 5 publications

Flexible low-voltage organic thin-film transistors and PMOS inverters: the effect of channel width on noise margin

Flexible low-voltage organic thin-film transistors and PMOS inverters: the effect of channel width on noise margin

Improved contact resistivity and intra-die variation in organic thin film transistors

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

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