Analysis of the Single-Crystalline Silicon Photovoltaic (PV) Module Performances Under Low γ - Radiation from Radioactive Source

Ouédraogo, Adama; Mogmenga, Ladifata; Bado, Nébon; Ky, Thierry Sikoudouin Maurice; Bathiébo, Dieudonné Joseph

doi:10.1007/s12633-019-00282-7

Cited by 6 publications

(2 citation statements)

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“…It is presented in this work an analytical model for the quasi-static capacitance of the space-charge region of p-n junction devices to provide an understanding of the physics related to storage of mobile holes and electrons in the junction space-charge region. The behavior under solar illumination and under gamma radiation of a single-crystalline silicon solar PV module had been studied by Ouedraogo et al [7]. In this study, under the extremely low values of the radiation dose, the solar PV module shown some improvements of the photo-current and the electric power while the photo-voltage is being constant.…”

Section: Introductionmentioning

confidence: 75%

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

Ouédraogo¹,

Ouedraogo²,

Kaboré³

et al. 2020

EPE

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The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell's electrical outputs.

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Section: Introductionmentioning

confidence: 75%

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

Ouédraogo¹,

Ouedraogo²,

Kaboré³

et al. 2020

EPE

Self Cite

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show abstract

“…The performances of a PV cell are dependent on external factors, such as solar radiation, temperature, gamma radiation, etc. Indeed, in the presence of gamma radiation, the performances of a PV cell could degrade [1]. The same is true for operating a PV cell in a high heat environment, resulting in a rise in its temperature.…”

Section: Introductionmentioning

confidence: 99%