Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

Reshchikov, M. A.; Korotkov, R. Y.

doi:10.1103/physrevb.64.115205

Cited by 189 publications

(216 citation statements)

References 30 publications

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“…1 and parameters used in the relationships describing yellow PL in GaN from Ref. 18. We assumed different donor D itD ðEÞ and acceptorlike D itA ðEÞ interface state density distributions in the whole AlGaN bandgap at the Al 2 O 3 /AlGaN interface and neglected the states at AlGaN/GaN one.…”

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confidence: 99%

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method

et al. 2013

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We determined the energy distribution of donor-like interface state density D-itD(E) at the Al2O3/AlGaN interface in a metal/Al2O3/AlGaN/GaN heterostructure (MISH) capacitor. In this order, we developed a point-by-point graphical method based on the measurement and simulations of the MISH photocapacitance versus ultraviolet light intensity. We found a tail-like shaped D-itD(E) strongly decreasing from the value of 5 x 10(13) to 4 x 10(12) eV(-1) cm(-2) in the energy range between 0.12 eV and 0.45 eV from the AlGaN valence band edge. (C) 2013 AIP Publishing LLC

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confidence: 99%

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method

et al. 2013

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“…The two PL peak intensities show similar pump intensity dependence at both RT and LT. At both RT and LT the blue emission intensity increases nearly linearly with excitation while the intensity of red emission saturates at higher excitation intensities. The saturation of the emission of defect states depends upon the defect 9 concentration and the lifetime of the states 35,36 . In these nanowires the red states become saturated at higher excitation which results in increased PL intensity from the blue emission.…”

Section: Resultsmentioning

confidence: 99%

Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

et al. 2016

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ABSTRACT:Nanowires are a promising option for sensitized solar cells, sensors, and display technology. Most of the work thus far has focused on binary oxides for these nanowires, but ternary oxides have advantages in additional control of optical and electronic properties. Here we report on the diffuse reflectance, Low Temperature (LT) and Room Temperature (RT) Photoluminescence (PL), PL Excitation (PLE) spectrum, and Time Resolved PL (TRPL) of Zinc Tin Oxide (ZTO) nanowires grown by Chemical Vapor Deposition. The PL from the ZTO nanowires does not exhibit any band gap or near gap emission, and diffuse reflectance measurement confirms that these ZTO nanowires have a direct forbidden transition.The broad PL spectrum reveals two Gaussian peaks centered at 1.86 eV (red) and 2.81 eV (blue), representing two distinct defect states or complexes. The PL spectra was further studied by Time Resolved Emission Spectrum (TRES) and intensity dependent PL and TRPL. The time resolved measurements show complex non-exponential decays at all wavelengths, indicative of defect to defect transitions, and the red emissive states decay much slower than the blue emissive states. The effects of annealing in air and vacuum are studied to investigate the origin of the defect states in the nanowires showing that the blue 2 states are related to oxygen vacancies. We propose an energy band model for the nanowires containing defect states within the band gap and the associated transitions between these states that are consistent with our measurements.

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“…Such acceptors have been observed in GaN [11], but their origins remain obscure. We cannot exclude the possibility that Si is substituting for N as well as Ga, thus acting like an acceptor or the formation of Si clusters with an acceptor character [12].…”

Section: Resultsmentioning

confidence: 99%

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

et al. 2003

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We report on detailed temperature dependent, time-resolved photoluminescence (TRPL) studies of Si-doped AlGaN epilayers. In these samples, the Al concentration varies from 25% to 66%. The samples were found to exhibit metallic-like temperature-independent conductivity. The deep level "yellow" emission, whose presence would indicate the existence of a large number of defects associated with growth, Si incorporation, and/or alloy formation, is absent. In addition to emission corresponding to the donor-bound exciton, the PL spectrum exhibits features associated with transitions involving localized carriers. This assignment of the emission mechanisms is based on the activation energies extracted from the temperature dependent photoluminescence (PL) quenching. Specifically, at room temperature the PL spectrum is dominated by transitions involving localized states. The localization energy varied from sample to sample and was observed to be between 115 meV to 200 meV. The PL intensity decay in the lower Al mole fraction epilayers exhibits a slow component associated with the presence of donor-bound excitons.

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Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

Cited by 189 publications

References 30 publications

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method

Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

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Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

Cited by 189 publications

References 30 publications

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

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Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method