Analysis of the Threshold Voltage BSIM-Model for a Short Channel PD-SOI DTMOS

Jimenez-P, A.; Hidalga-W, F.J. De la

doi:10.1109/iceee.2007.4345045

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“…The threshold voltage values in P-type and N-type MOSFET devices are evaluated with extensive detail in the BSIM4 compact model as a heuristic parameters and mathematical function of technology by using equation declared in [11] and also has been used in [12] for BSIM and PD-SOI models' threshold voltage comparison analysis.…”

Section: Methodology Implementationmentioning

confidence: 99%

Safe operation region characterization for quantifying the reliability of CMOS logic affected by process variations

Khalid

Mastrandrea

Olivieri

2014

2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Technology parameter variations combined with voltage noise can become a major cause of logic errors in digital circuits. This presentation brings in the idea of "safe operation region" to permit a robust analytical Monte Carlo evaluation of the reliability of logic circuits in a given technology, avoiding timeconsuming SPICE-level or device-level Monte Carlo simulations. The application of the approach is demonstrated for the case of a 22 nm bulk CMOS process.

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Section: Methodology Implementationmentioning

confidence: 99%