Analysis of time-resolved donor—acceptor-pair spectra of ZnSe : Li and ZnSe : N

Bäume, P.; Strauf, Stefan; Gutowski, J.; Behringer, Martin; Hommel, D.

doi:10.1016/s0022-0248(98)80110-3

Cited by 8 publications

(16 citation statements)

References 14 publications

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“…(1). The values for the thermal activation energies are in agreement with the optical binding energies for the very shallow donor level [9] and the deep donor level [1,3,5,7], respectively. In the framework of a negatively charged donor, E A1 corresponds to the activation of the first electron of the D À leaving behind the D 0 state, while E A2 corresponds to the activation of the second electron leaving behind the D þ state.…”

Section: Resultssupporting

confidence: 77%

“…Beyond that, the doping behaviour of thin, fully strained ZnSe layers is largely unknown. In contrast to the commonly investigated nitrogen doping of thick, relaxed ZnSe layers [1][2][3][4][5][6] we focused on the more device relevant situation were N is incorporated in fully strained thin (QW like) layers. For this purpose the observation of the donor-acceptor-pair (DAP) recombination is a useful tool to analyze the influence of compensating donors.…”

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confidence: 99%

“…For this purpose the observation of the donor-acceptor-pair (DAP) recombination is a useful tool to analyze the influence of compensating donors. In strain relaxed layers the incorporation of N was found to be accompanied by the formation of a shallow donor ðD s Þ of approximately 29 meV [3] binding energy and a 44-52 meV [1,3,5,7] deep donor ðD d Þ, respectively. In conjunction with the well-known N acceptor level of 110 meV [8] these donors manifest themselves through the appearance of two DAP transition band series, D s AP and D d AP.…”

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confidence: 99%

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Negatively Charged Donor Centers in Ultrathin ZnSe:N Layers

Strauf

Michler

Gutowski

et al. 2002

phys. stat. sol. (b)

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ZnMgSSe barriers were investigated by means of photoluminescence and spin-flip-Raman (SFR) scattering spectroscopy. A new donor-acceptor-pair (DAP) band has been observed involving a very shallow donor with a binding energy of (19 AE 2) meV and the well-known N acceptor on Se site. Further evidence for a new donor center is given by transitions in angle-dependent SFR scattering measurements which correspond to an isotropic (donor-like) g-value of (1:49 AE 0:03). The 19 meV donor is interpreted as the negatively charged state of the usually found 52 meV deep donor in ZnSe : N. This is supported by the temperature behavior of the DAP band and, further, by its pronounced appearance for resonant excitation into the barriers quite similar to the behavior of trions.Introduction One of the most important prerequisites for long lifetime optoelectronic devices such as laser diodes is crystalline perfection. Therefore, it is absolutely necessary to keep the maximum layer thickness in strained heterostructures below the critical value of strain relaxation. In ZnSe-based devices p-type doping is one of the most serious difficulties. Beyond that, the doping behaviour of thin, fully strained ZnSe layers is largely unknown. In contrast to the commonly investigated nitrogen doping of thick, relaxed ZnSe layers [1-6] we focused on the more device relevant situation were N is incorporated in fully strained thin (QW like) layers. For this purpose the observation of the donor-acceptor-pair (DAP) recombination is a useful tool to analyze the influence of compensating donors. In strain relaxed layers the incorporation of N was found to be accompanied by the formation of a shallow donor ðD s Þ of approximately 29 meV [3] binding energy and a 44-52 meV [1,3,5,7] deep donor ðD d Þ, respectively. In conjunction with the well-known N acceptor level of 110 meV [8] these donors manifest themselves through the appearance of two DAP transition band series, D s AP and D d AP. For the case of fully strained ZnSe : N layers which are embedded in ZnMgSSe barriers, we have recently found that a very shallow donor with a binding energy of (19 AE 2) meV is the dominant compensating donor while transitions involving the deep donors ðD d Þ usually found in strain-relaxed layers seem to be largely absent [9]. In this work we present further evidence for this new donor level. In addition, we propose a model in which the very shallow donor level is assigned to the negatively charged state of the deep donor D d . Negatively charged donor centers (D À ) are the immobile analogue of the mobile trion complex, and they consist of a fixed positive charge ðD þ Þ and two electrons [10].

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Section: Resultssupporting

confidence: 77%

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confidence: 99%

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confidence: 99%

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Negatively Charged Donor Centers in Ultrathin ZnSe:N Layers

Strauf

Michler

Gutowski

et al. 2002

phys. stat. sol. (b)

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“…and the results were fully described in their classic paper [2]. Additional information can be also found in [3] and results of recent studies of donor-acceptor pair luminescence in ZnSe and GaN can be found in [4] and [5], respectively.…”

Section: Introductionmentioning

confidence: 87%

Kinetics of radiative recombination of the “pseudo‐donor–pseudo‐acceptor” pairs in InGaN/GaN

Zakrzewski¹

2004

phys. stat. sol. (c)

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PACS 78.47.+p, 78.55.-m, 78.67.-n It was shown that the recombination kinetics of electrons and holes localized on potential fluctuations in quantum wells could be calculated exactly in terms of hypergeometric functions. Our algorithms are much easier for coding and much faster and more accurate then previously developed. Moreover, our approach enables real time processing of experimental data.

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“…The energy levels of the donors in ZnSe are conditioned by the Zn i defects, and the acceptor centres may be conditioned by O Se or (O Se -D). The features of the luminescence of the DAPs have been studied in several works [23][24][25][26]. In undoped ZnSe crystals, a wide emission band with a maximum at 490 nm is observed as well.…”

Section: X-ray Induced Luminescence Spectra Of Znsementioning

confidence: 99%

Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals

et al. 2016

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This article presents the results of an experimental investigation of the energy spectra of charge carrier traps in undoped high-resistivity ZnSe single crystals. Fourteen peaks were found in the thermostimulated luminescence spectra of the ZnSe samples at temperatures between 8 K and 450 K, and the thermal activation energies of the charge carrier traps were estimated for the most intense peaks. It was found that the energy spectra of the charge carrier traps in ZnSe exhibit oscillatory regularity, and the energy of a vibrational quantum was estimated to be ω = 206 cm −1 , which is in good agreement with the vibrational mode in the Raman spectrum. Additionally, a linear relationship was observed between the thermal activation energies of the charge carrier traps and the temperature positions of the maxima in the thermostimulated luminescence of ZnSe.

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Analysis of time-resolved donor—acceptor-pair spectra of ZnSe : Li and ZnSe : N

Cited by 8 publications

References 14 publications

Negatively Charged Donor Centers in Ultrathin ZnSe:N Layers

Negatively Charged Donor Centers in Ultrathin ZnSe:N Layers

Kinetics of radiative recombination of the “pseudo‐donor–pseudo‐acceptor” pairs in InGaN/GaN

Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals

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