Analysis of Transmission Lines on Integrated-Circuit Chips

Ho, Irving T.; Mullick, S.C.

doi:10.1109/jssc.1967.1049819

Cited by 45 publications

(7 citation statements)

References 7 publications

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“…The characteristics of microstrip structures on semiconductor substrate, especially metal on oxide on silicon, have been investigated extensively [27]- [30]. In general, a MOS microstrip structure can be modeled by a three-element network comprised of and (see Fig.…”

Section: Substrate Parasiticsmentioning

confidence: 99%

Physical modeling of spiral inductors on silicon

Yue¹,

Wong²

2000

IEEE Trans. Electron Devices

763

350

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This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance.

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Section: Substrate Parasiticsmentioning

confidence: 99%

Physical modeling of spiral inductors on silicon

Yue¹,

Wong²

2000

IEEE Trans. Electron Devices

763

350

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“…Some authors discussed the substrate parasitics by the use of a microstrip model on semiconductors, which was studied extensively [27][28][29]. As an alternative, we adopt the parametric model recently proposed by Masoumi et al [22].…”

Section: Substrate Parasiticsmentioning

confidence: 99%

Accurate model for micromachined microwave planar spiral inductors

Zhang

Long

et al. 2003

Int J RF and Microwave Comp Aid Eng

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An accurate model is presented for micromachined on-chip spiral inductors, in which the high-frequency current crowding effects in metal traces are considered by simplified partial element equivalent circuits, and the substrate parasitics are extracted by the parametric modeling method. The model has been confirmed by both measurements and the results from the 3-dimensional finite element method. This equivalent circuit model enables the prediction and optimization of high-Q micromachined spiral inductors in gigahertz frequencies.

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“…The losses in integrated spiral inductors are of two kinds: conductor losses due to the resistivity of the metal, and substrate losses due to the coupling between the central conductor and the silicon substrate [17,18].…”

Section: Spiral Inductors On Hr and Std Soi Substratesmentioning

confidence: 99%