A new compact DC and large-signal physics-based non-quasi-static (NQS) MOSFET model is proposed, suitable for partially-depleted body-tied silicon-on-insulator (SOI) MOSFETs. The developed four-terminal nonlinear model is comprised solely of fully-continuous explicit expressions that allow for quick simulation times and accurate intermodulation distortion analysis. Nonlinear depletion capacitances, as well as short-channel effects such as drain-induced barrier lowering, have been included, while the self-heating effects of SOI MOSFETs are modeled using a first-order thermal RC circuit. NQS distributed channel behaviour is accounted for by using a segmented channel model allowing the model in principle to operate up to high mm-wave frequencies. The model is verified for DC and large signal one-/multi-tone operation as well as through WCDMA measurements.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.