2010
DOI: 10.1007/s11664-010-1297-y
|View full text |Cite
|
Sign up to set email alerts
|

Analysis of Ultraviolet Curing Effect on the Dielectric Constant and Molecular Structure of a Porous Dielectric Film

Abstract: In this work, we investigated the role of ultraviolet (UV) curing on the dielectric constant (k) and molecular structure of a porous organosilicate glass (p-OSG) dielectric with k of approximately 2.5. The dielectric constant was investigated in a fundamental manner by quantifying its polarizability components: electronic, ionic, and dipolar. A method involving the KramersKronig relations was formulated to separate the ionic and electronic polarizabilities. After quantifying the polarizability components, the … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
4
0

Year Published

2011
2011
2024
2024

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 20 publications
1
4
0
Order By: Relevance
“…The density evolution of the alumina and alucone films after thermally processing from 150 to 350 °C at 100 °C intervals in both the presence and absence of UV light in N 2 ambient was also probed using ex-situ heating and subsequent XRR to elucidate the role of short wavelength (172 nm) UV on the annealing process (Figure S3). The density of the alucone films increased with annealing temperature similar to the in-situ experiment in air, although slightly higher densities were measured in the ex-situ processed samples. These slight differences may be ascribed to the different heating rate and ambient atmosphere between the measurements.…”
Section: Resultssupporting
confidence: 66%
“…The density evolution of the alumina and alucone films after thermally processing from 150 to 350 °C at 100 °C intervals in both the presence and absence of UV light in N 2 ambient was also probed using ex-situ heating and subsequent XRR to elucidate the role of short wavelength (172 nm) UV on the annealing process (Figure S3). The density of the alucone films increased with annealing temperature similar to the in-situ experiment in air, although slightly higher densities were measured in the ex-situ processed samples. These slight differences may be ascribed to the different heating rate and ambient atmosphere between the measurements.…”
Section: Resultssupporting
confidence: 66%
“…More recently, Smith et al have extended this investigation to porous SiOCH films deposited using DEMS and a porogen, then cured with a UV assisted thermal treatment. 10 They also showed the presence of an ionic contribution which increases when the UV curing time increases while the dipolar contribution remains close to 0.17.…”
Section: Relation With Porosity and Chemistry-tablementioning
confidence: 94%
“…But according to Table I, it seems very -Porous SiOCH deposited by PECVD using a porogen approach: this work, DEMS and NBD UV cured, this work, DEMS and ATRP UV cured, this work, DEMS and NBD thermally cured, 1,3,5trimethyl-1,3,5-trivinylcyclotrisiloxane and Methylmethacrylate, 31 Diethoxymethyloxiranylsilane and Norbornene, 28 Tetramethylcyclotetrasiloxane and porogen, 29,30 Precursors unknown, 34 Precursors unknown, 32 DEMS and porogen, 11,25,33 DEMS and porogen. 10 -Porous SiOCH deposited by PECVD using a non-porogen approach: Bis-trimethylsilylmethane, 7 Methyltriethoxysilane, 36 Vinyltrimethylsilane. 37 -Porous SiOCH deposited by spin-coating:…”
Section: This Work (Dems) Uv Curingmentioning
confidence: 99%
See 1 more Smart Citation
“…In addition, carbon loss, which results in an increase in defect concentration, also occurs simultaneously. [10][11][12] In this work, the effects of a "dry" Cs ion-implantation in SiCOH are investigated. The goal is to determine whether the advantages previously obtained using wet chemistry could be obtained using Cs ion-implantation, thus being a potential supplement to or even a substitution for the incumbent UV curing method.…”
mentioning
confidence: 99%