Dielectric Constant of Porous Ultra Low-κ Thin Films

Jousseaume, V.; Gourhant, Olivier; Gonon, P.; Zenasni, A.; Favennec, L.

doi:10.1149/2.jes113605

Cited by 19 publications

(15 citation statements)

References 35 publications

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“…The total porosity can also be estimated using a Lorentz− Lorenz model. 29 In the case of the more porous films (OMCTS cured 12 min, with a refractive index of 1.15 at 633 nm) a total porosity of 65% is obtained assuming a skeleton refractive index of 1.45 at 633 nm. This result is in good agreement with EP data and far above the accepted limit in the PECVD community, the limit being close to 50% using a porogen approach.…”

Section: Resultsmentioning

confidence: 99%

Porous SiOCH Thin Films Obtained by Foaming

et al. 2016

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Porous organosilicate thin films (SiOCH) deposited by plasma-enhanced chemical vapor deposition (PECVD) are used as dielectric layers in advanced microelectronic interconnections and as chemical layers in chemical sensors and biosensors. One challenge is to increase the porosity in these films, the classical method being limited to porosity rate close to 50%. In this paper, we report an innovative and simple strategy to perform highly nanoporous SiOCH thin films without the use of any templates or external blowing agents. This approach uses a SiOCH deposited by PECVD (without any porogens) intentionally covered by a dense crust. The porosity generation is obtained through an ultraviolet (UV)-assisted thermal annealing of the stack. The highest porosities ever demonstrated for SiOCH PECVD thin films are obtained (porosity close to 65%). The impact of different process parameters (choice of precursor, deposition, and annealing conditions) on the creation of porosity is studied. The porosity introduction with this original method can be related to a foaming mechanism: a gas is produced inside the film during the UV-assisted curing which causes a film expansion and allow the creation of porosity.

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Section: Resultsmentioning

confidence: 99%

Porous SiOCH Thin Films Obtained by Foaming

et al. 2016

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“…Porosity has been purposely introduced into materials such as SiC within the microelectronics industry in order to achieve a future-generation of ultralow-k (ULK) materials having a dielectric constant near or less than 2.2 [42][43][44][45]. One of the downsides of porosity within SiC films is the ability for a liquid or impurity to diffuse through the pores and cause portions of the film to delaminate [45][46][47][48][49]. Although we are not interested in the electrical properties of SiC films, we can expound on knowledge from the microelectronics industry to increase the chemical robustness of SiC protective coatings.…”

Section: Introductionmentioning

confidence: 99%

Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics

et al. 2020

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To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N2 plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N2 plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N2 plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC’s chemical durability. By combining N2 plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO2 layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N2 plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.

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“…[1][2][3] To further decrease RC delay time, low resistivity copper (Cu) layer and ultralow dielectric constant materials (k < 2.6) are widely used as conductor and insulator, respectively, in the backend interconnect system. [3][4][5][6] To obtain the ultralow dielectric constant materials, introducing porosity into a dielectric film has become an attractive method to produce porous low-k film. [6][7][8] However, compared with traditional SiO 2 dielectric film, porous low-k films with a decreasing dielectric constant value have unstable thermal, mechanical, and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

“…[3][4][5][6] To obtain the ultralow dielectric constant materials, introducing porosity into a dielectric film has become an attractive method to produce porous low-k film. [6][7][8] However, compared with traditional SiO 2 dielectric film, porous low-k films with a decreasing dielectric constant value have unstable thermal, mechanical, and electrical properties. Therefore, integration of porous low-k films would induce some problems, such as high leakage current, low breakdown voltage, high moisture uptake, and weak tolerance against the chemical mechanical polishing process.…”

Section: Introductionmentioning

confidence: 99%

Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials

Huang

Chang

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This study investigates the effect of the NH 3 /N 2 ratio in plasma treatment on the physical and electrical properties as well as the reliability characteristics of porous low-k films. All of the plasma treatments resulted in the formation of a thin and modified layer on the surface of porous low-k films, and the properties of this modified layer were influenced by the NH 3 /N 2 ratio in the plasma. Experimental results indicated that pure N 2 gas plasma treatment formed an amide-like/ nitride-like layer on the surface, which apparently leads to a higher increase in the dielectric constant. Plasma treatment with a mixture of NH 3 /N 2 gas induced more moisture uptake on the surface of the low-k dielectric, degrading the electrical performance and reliability. Among all plasma treatment with NH 3 /N 2 mixed gas, that with pure NH 3 gas yielded low-k dielectrics with the worse electrical and reliability characteristics. V

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Dielectric Constant of Porous Ultra Low-κ Thin Films

Cited by 19 publications

References 35 publications

Porous SiOCH Thin Films Obtained by Foaming

Porous SiOCH Thin Films Obtained by Foaming

Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics

Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials

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