Analysis of writing and erasing behaviours in phase change materials

Hyot, Bérangère; Poupinet, Ludovic; Gehanno, V.; Desré, P.

doi:10.1016/s0304-8853(02)00470-5

Cited by 26 publications

(14 citation statements)

References 4 publications

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“…A more plausible physical origin for the large variations in C g exp͑−E g / kT͒ we observe can be the viscosity of the phase-change material, which is often taken according to the Stokes-Einstein relation directly proportional with the reciprocal of the jump attempt frequency 1 / . [43][44][45] In some cases the viscosity is described by an Arrhenian temperature dependence. [45][46][47][48] However, in most cases the ͑strongly temperature dependent͒ Vogel-Fulcher-Tammann ͑VFT͒ relation ͑that holds particularly in the, for us correct, temperature range T g Ͻ T Ͻ T g + 100 K͒ is used to describe the viscosity , 42,49-52…”

Section: A Why Do the Capping Layers Affect The Growth Rate?mentioning

confidence: 99%

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Pandian

Kooi

Hosson

et al. 2006

Journal of Applied Physics

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Isothermal crystallization of doped Sb x Te fast-growth phase-change films, with and without capping layers, was investigated using transmission electron microscopy, which provided direct and quantitative information on nucleation and growth processes separately. Two types of amorphous dielectric layers, ZnS -SiO 2 and GeCrN, were used for sandwiching the Sb x Te films to form typical trilayer stacks, which are the active part in applications. The nucleation and growth parameters of Sb x Te films were found to be influenced by the dielectric capping layers. The crystal growth rate is temperature dependent and it reduces when the film is sandwiched between the dielectric layers. The reduction in growth rate differs with the capping layer type. The capping layer influence on the growth rate is pronounced at lower temperatures ϳ160°C, but tends to vanish at higher temperatures ϳ200°C. The activation energy for crystal growth is 2.4± 0.3 eV for an uncapped film and it increases ϳ40% when the capping layers, GeCrN or ZnS -SiO 2 , are added. A temperature and time dependent nucleation rate is found and it is accelerated ϳ1.7 times by GeCrN layers, whereas it is retarded ϳ5 times by ZnS -SiO 2 layers. The activation energy for crystal nucleation is 6.1± 0.4 eV for an uncapped film and it is not noticeably altered by the capping layers. These variations observed in the crystallization kinetics are attributed to variations in interface energy between the phase-change film and the capping layers or vacuum and the confinement effect by the capping layers on the phase-change film.

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Section: A Why Do the Capping Layers Affect The Growth Rate?mentioning

confidence: 99%

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Pandian

Kooi

Hosson

et al. 2006

Journal of Applied Physics

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“…Materials used for active recording films are currently based on the Sb-Te alloys [1]. Mostly used materials are from the Ge-Sb-Te (GST) [2] and the Ag-In-SbTe (AIST) [3] systems, respectively.…”

Section: Introductionmentioning

confidence: 99%

Thermal and optical properties of AgSbS2 thin films prepared by pulsed laser deposition (PLD)

Gutwirth

Wágner

Němec

et al. 2008

Journal of Non-Crystalline Solids

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“…Materials used for active recording films are currently based on Sb-Te alloys [1]. Material typically used for application include the Ge-Sb-Te (GST) [2] system and the Ag-InSb-Te (AIST) [3] system.…”

Section: Introductionmentioning

confidence: 99%

Influence of silver concentration in Ag (Sb0.33S0.67)100− thin amorphous films on photoinduced crystallization

Gutwirth¹,

Wagner²,

Bezdička³

et al. 2007

Journal of Non-Crystalline Solids

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Analysis of writing and erasing behaviours in phase change materials

Cited by 26 publications

References 4 publications

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Thermal and optical properties of AgSbS2 thin films prepared by pulsed laser deposition (PLD)

Influence of silver concentration in Ag (Sb0.33S0.67)100− thin amorphous films on photoinduced crystallization

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