Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

Brody, Jed; Rohatgi, A.

doi:10.1016/s0038-1101(01)00169-1

Cited by 21 publications

(14 citation statements)

References 6 publications

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“…The derivation of S eff for the four special cases is similar to those derived by Kuhlmann, 2 Brody and Rohatgi, 3 and Steingrube et al, 4 except that it includes the extensions of including Case 2 and of removing the requirement that there be either low-or high-injection in the remaining cases (though they remain predicated on the validity of Eq. (7)).…”

Section: Dependence Of S Eff and J 0s On Doping And Surface Chargementioning

confidence: 78%

“…The complicated effects of Q on U s (Dn d ) within this range have been examined elsewhere. 1,3,13,21 We conclude from Figure 3 that for undiffused c-Si, which typically has N s < 10 16 cm À3 , Case 1 is unjustified unless jQj is impractically small (less than 5 Â 10 9 cm À2 ). For diffused c-Si, Case 1 might become valid for dielectrics with a small jQj when N s > 10 19 cm À3 .…”

Section: Casementioning

confidence: 83%

“…The first reason is that when surface charge is significant, S eff depends on N s and Dn d . [1][2][3][4] In fact, for undiffused silicon wafers, very little surface charge is required to introduce this dependence (see Sec. VI).…”

Section: Introductionmentioning

confidence: 99%

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On effective surface recombination parameters

McIntosh¹,

Black²

2014

Journal of Applied Physics

144

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This paper examines two effective surface recombination parameters: the effective surface recombination velocity S eff and the surface saturation current density J 0s. The dependence of S eff and J 0s on surface charge Q, surface dopant concentration N s , and interface parameters is derived. It is shown that for crystalline silicon at 300 K in low-injection, S eff is independent of N s only when Q 2 /N s < 1900 cm in accumulation and Q 2 /N s < 1600 cm in depletion; otherwise S eff increases with N s. These conditions are rarely satisfied in undiffused wafers but sometimes satisfied in heavily diffused wafers when coated with lowly charged films. Under the same conditions, J 0s is independent of N s when Q 2 /N s > 1.5 Â 10 7 cm for accumulation and Q 1.85 /N s > 1.5 Â 10 6 cm for inversion. These conditions are commonly satisfied in undiffused wafers but rarely in diffused wafers. We conclude that for undiffused silicon, J 0s is superior to the conventional S eff as a metric for quantifying the surface passivation, whereas for diffused silicon, the merit in using J 0s or S eff (or neither) depends on the sample. Experimental examples are given that illustrate the merits and flaws of J 0s and S eff .

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Section: Dependence Of S Eff and J 0s On Doping And Surface Chargementioning

confidence: 78%

Section: Casementioning

confidence: 83%

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On effective surface recombination parameters

McIntosh¹,

Black²

2014

Journal of Applied Physics

144

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“…Therefore, to consider the combined effects of the fixed charge and D it on the surface passivation, the surface recombination rate was calculated from the experimental results listed in Table 2. The equation used to calculate the surface recombination rate is as follows:18 …”

Section: Resultsmentioning

confidence: 99%

Effects of Pre‐annealing on Firing Stability of Atomic Layer‐Deposited Al₂O₃

Bae

Kim

Lee

et al. 2015

Israel Journal of Chemistry

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Al2O3 layers fabricated with atomic layer deposition (ALD) show high levels of surface passivation on p‐ and n‐type silicon wafers. In order to form front and rear electrodes, Al2O3 layers should undergo a firing process at a high peak temperature. Therefore, the Al2O3 layer must be stable under these conditions to maintain a high level of surface passivation during the firing process. In this study, Al2O3 layers fabricated with ALD were pre‐annealed to enhance their thermal stability during the firing process. From quasi‐steady state photoconductance (QSSPC) measurements, the difference between the implied Voc values of the pre‐annealed and fired samples was found to be smallest (3 mV) when the sample was pre‐annealed at 620 °C. The surface recombination rate calculated from capacitance‐voltage (C‐V) measurements of metal‐Al2O3‐Si (metal‐insulator‐semiconductor) structures was shown to be low when the sample was pre‐annealed at 600–650 °C. Thus, firing stability was achieved with pre‐annealing at 620 °C by reducing the surface recombination rate. We conclude that it is necessary to pre‐anneal the Al2O3 passivation layer at this specific temperature to reduce the degradation of the passivation quality of Al2O3 after the firing process.

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“…As lâminas com superfícies passivadas através de oxidações térmicas apresentam o seu tempo de vida efetivo, τ ef , dependentes da velocidade efetiva de recombinação de ambas as superfícies da amostra [86,87] , 2S ef , do tempo de vida do volume, τ vol , e da espessura da lâmina, W, conforme equação (5.11). .…”

Section: Caracterização De Materiais: Superfícies Passivadas Através unclassified

Células solares de silício de alto rendimento: otimizações teóricas e implementações experimentais utilizando processos de baixo custo.

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Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

Cited by 21 publications

References 6 publications

On effective surface recombination parameters

On effective surface recombination parameters

Effects of Pre‐annealing on Firing Stability of Atomic Layer‐Deposited Al₂O₃

Células solares de silício de alto rendimento: otimizações teóricas e implementações experimentais utilizando processos de baixo custo.

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Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

Cited by 21 publications

References 6 publications

On effective surface recombination parameters

On effective surface recombination parameters

Effects of Pre‐annealing on Firing Stability of Atomic Layer‐Deposited Al2O3

Células solares de silício de alto rendimento: otimizações teóricas e implementações experimentais utilizando processos de baixo custo.

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Effects of Pre‐annealing on Firing Stability of Atomic Layer‐Deposited Al₂O₃