Analytical band Monte Carlo analysis of electron transport in silicene

Yeoh, Keat Hoe; Ong, Duu Sheng; Ooi, C. H. Raymond; Yong, Thian-Khok; Lim, Siong Kang

doi:10.1088/0268-1242/31/6/065012

Cited by 14 publications

(46 citation statements)

References 28 publications

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“…The impurity scattering is considered in the short-ranged potential case [44] and is demonstrated to play a substantial role, especially in the low-temperature regime. As for the phonon scattering, all three acoustic [outof-plane (ZA), transverse (TA), and longitudinal (LA)] and optical (ZO, TO, LO) phonon modes of silicene [32,42,45] are included and discussed meticulously, making the present work's results much more fulfilled than our previous works [29,31]. The full-width at half-maximum (FWHM) of the resonant peaks is obtained by the computational method and discussed in detail.…”

Section: Introductionmentioning

confidence: 99%

Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

et al. 2020

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We study the optical absorption properties of silicene and germanene in the presence of the perpendicular magnetic and electric fields. Their low-energy Landau level (LL) spectra are controllable by an external electric field, where the spin-and valley-degeneracy of the LLs are strongly influenced by the electric and Zeeman fields. The electric field has removed spin-degeneracy at a given valley. Analytical expressions for the magneto-optical absorption coefficient (MOAC) are expressed in the presence of the interaction between carriers and random impurities and the intrinsic phonons including the spin and valley effects. The results evaluated for the topological insulator and valley-spin-polarized metal phases showed that when the electric field is included, the MOAC peaks are separated for opposite spin cases where the splitting in germanene is stronger than that in silicene. The peak's intensity caused by the carrier-photon-impurity scattering is the highest, the next is the carrier-photon scattering, while the carrier-photon-phonon scattering shows the lowest in both materials. Among the different phonon modes, the out-of-plane (ZA) mode in silicene dominates the others, being attributed to its buckled atomic structure, which does not exist in graphene. When the ZA mode is taken into account, the estimated resultant mobility from the full-width at half-maximum is significantly supported by the experimental result in silicene.

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Section: Introductionmentioning

confidence: 99%

Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

et al. 2020

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“…Characterization of electronic transport of the material is critical for assessing and understanding its potential significance for its applications in electronic devices. In suspended silicene, phonon limited electron mobility and velocity-field characteristics are the most theoretically studied electronic transport properties by * Corresponding author; sskubakaddi@gmail.com considering the electron scattering by intrinsic intravalley and intervalley acoustic phonons (ap) and optical phonons (op) [9,[12][13][14]16]. The phonon branches taken into account are the longitudinal acoustic (LA), transverse acoustic (TA), out-of-plane acoustic (ZA), longitudinal optical (LO), transverse optical (TO) and outof-plane optical (ZO).…”

Section: Introductionmentioning

confidence: 99%

“…The phonon branches taken into account are the longitudinal acoustic (LA), transverse acoustic (TA), out-of-plane acoustic (ZA), longitudinal optical (LO), transverse optical (TO) and outof-plane optical (ZO). Employing the full-band Monte Carlo (FMC) model [9] and the analytical Monte Carlo (AMC) model [12,13,16], the predicted room temperature mobility is ∼1000 cm 2 /Vs, and the saturation drift velocity is about 5 − 10 × 10 6 cm/s. From the first principle calculations, using the FMC model Li et al [9] have determined the phonon energies and deformation potential coupling constants for the intravalley and intervalley LA, TA, and ZA phonons and intravalley and intervalley LO, TO, and ZO phonons.…”

Section: Introductionmentioning

confidence: 99%

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Power loss of hot Dirac fermions in silicene and its near equivalence with graphene

Kubakaddi,

Phuc

2020

Preprint

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The power loss P of hot Dirac fermions through the coupling to the intrinsic intravalley and intervalley acoustic and optical phonons is analytically investigated in silicene as a function of electron temperature Te and density ns. At very low Te, the power dissipation is found to follow the Bloch-Grüneisen power-law ∝ T 4 e and n −0.5 s , as in graphene, and for Te 20−30 K, the power loss is predominantly due to the intravalley acoustic phonon scattering. On the other hand, dispersionless low energy intervalley acoustic phonons begin to dominate the power transfer at temperatures as low as ∼30 K, and optical phonons dominate at Te 200 K, unlike the graphene. The total power loss increases with Te with a value of ∼10 10 eV/s at 300 K, which is the same order of magnitude as in graphene. The power loss due to intravalley acoustic phonons increases with ns at higher Te, whereas due to the intervalley acoustic and optical phonons is found to be independent of ns. Interestingly, the energy relaxation time in silicene is about 4 times higher than that in graphene. For this reason, silicene may be superior over graphene for its applications in bolometers and calorimeters. Power transfer to the surface optical phonons PSO is also studied as a function of Te and ns for silicene on Al2O3 substrate and it is found to be greater than the intrinsic phonon contribution at higher Te. Substrate engineering is discussed to reduce PSO.

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“…As was shown in the detailed theoretical study by Fischetti and Vandenberghe [10], the parabolic phonon dispersion relation, combined with the Dirac dispersion, quenches the theoretical phonon-limited mobility in free-standing silicene to values as low as 0.01 cm 2 /(Vs). Note that some more primitive calculations in previous papers did not effectively account for the ZA phonon coupling and predicted much higher values [12,13,14]. Silicene–substrate interaction will somewhat alleviate mobility depression by suppressing ZA phonon scattering [15,16].…”

Section: Introductionmentioning

confidence: 99%

Electronic Transport Properties of Silicane Determined from First Principles

et al. 2019

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Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron–phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and holes was the ZA phonons. Different cut-off wavelengths ranging from 0.58 nm to 16 nm were used to study the possible suppression of the out-of-plane acoustic (ZA) phonons. The low-field mobility of electrons (holes) was obtained as 5 (10) cm2/(Vs) with a long wavelength ZA phonon cut-off of 16 nm. We showed that higher electron (hole) mobilities of 24 (101) cm2/(Vs) can be achieved with a cut-off wavelength of 4 nm, while completely suppressing ZA phonons results in an even higher electron (hole) mobility of 53 (109) cm2/(Vs). Velocity-field characteristics showed velocity saturation at 3 × 105 V/cm, and negative differential mobility was observed at larger fields. The silicane mobility was competitive with other two-dimensional materials, such as transition-metal dichalcogenides or phosphorene, predicted using similar full-band Monte Carlo calculations. Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed.

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Analytical band Monte Carlo analysis of electron transport in silicene

Cited by 14 publications

References 28 publications

Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

Magneto-optical absorption in silicene and germanene induced by electric and Zeeman fields

Power loss of hot Dirac fermions in silicene and its near equivalence with graphene

Electronic Transport Properties of Silicane Determined from First Principles

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