Analytical bias dependent noise model for InP HEMT's

Klepser, B.-U.H.; Bergamaschi, C.; Schefer, M.; Diskus, C.G.; Patrick, W.; Bächtold, W.

doi:10.1109/16.469392

Cited by 33 publications

(19 citation statements)

References 16 publications

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“…The reason for the higher MSG value of the dry etched HEMT's is that they show a higher output resistance R d s than the wet etched devices. In general, R d s increases for higher drain bias, i.e., higher drain gate voltages [7]. It is therefore presumed that R d s is higher for the dry etched devices as the more negative gate bias for maximum gain leads to a higher drain gate voltage.…”

Section: Resultsmentioning

confidence: 98%

“…4 because of the dominant gate shot noise in this frequency range [12]. However, at 26 GHz the noise figure of the dry etched HEMT is lower than the noise figure of the wet etched device due to the higher ft of the dry etched HEMT [7]. The drain current dependence of the noise figure shows the usual "U" shape behavior.…”

Section: Noise Source Parameters P and R Versus Drain Current Per MM mentioning

confidence: 88%

“…The measured peak transconductance of the devices was 380 mS/mm with a standard deviation of 3%. The gate bias for maximum gain was -0.6 V. For comparison, HEMT's with gate recesses etched by a nonselective phosphoric acid based solution were processed [7]. These devices were etched until the drain current reached 50% of the unetched value.…”

Section: Methodsmentioning

confidence: 99%

“…3, the parameters P and R are plotted against the drain current for both dry and wet etched [7] transistors for a drain voltage of 1.0 V. There is no significant difference in the behavior of the two transistor types. As expected, the noise source parameters P and R increase with increasing drain current [ 111. These results show that there is no degradation of the channel in terms of noise and microwave performance as a result of the dry gate recess etching step.…”

Section: Noise Source Parameters P and R Versus Drain Current Per MM mentioning

confidence: 99%

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Low-noise properties of dry gate recess etched InP HEMTs

Duran

Klepser

Bächtold

1996

IEEE Electron Device Lett.

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Lattice-matched InAlAsDnGaAs HEMT's with dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The highly selective dry etching process ensures uniform device parameters. The small signal and noise performance shows only minor differences between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the electrical and noise performance of the device at high frequencies. These results show that dry etched InP HEMT's have suitable characteristics for the fabrication of mm-wave integrated circuits.

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Section: Resultsmentioning

confidence: 98%

Section: Noise Source Parameters P and R Versus Drain Current Per MM mentioning

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: Noise Source Parameters P and R Versus Drain Current Per MM mentioning

confidence: 99%

See 2 more Smart Citations

Low-noise properties of dry gate recess etched InP HEMTs

Duran

Klepser

Bächtold

1996

IEEE Electron Device Lett.

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“…Noise model has conventionally been realized by implementing noise sources inside a nonlinear signal model [3]- [4]. Therefore, the modeled noise response depends on both the noise sources and the equivalent circuit parameters of the signal model.…”

Section: Introductionmentioning

confidence: 99%

Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Zhu

Wei

Klimashov

et al. 2008

2008 European Microwave Integrated Circuit Conference

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Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise model can be attached to any nonlinear signal model to predicate both noise and nonlinear signal responses.

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Scaleable comprehensive low‐noise PHEMT model that predicts IP3 and noise

Wei¹,

Zhu²,

Klimashov³

et al. 2010

Micro & Optical Tech Letters

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Correlation of IP3 in a phemt with the third derivative of Ids wrt Vgs, or Gm3 is addressed.A nonlinear large‐signal Phemt model was developed based on the fitting RF Gm characteristics as well as IV/CV. Systematic extraction approach is described. In extraction, RF Gm fitting minimizes the errors between modelled and measured Gm3. Scale‐ability in terms of DC, S‐parameters, and IP3 is demonstrated. For large‐size devices, other factors, such as RF‐Gds characteristics, are also important. Modelling of accurate noise response is realized with linear lookup table data based noise model and nonlinear voltage/current sampler. The over‐all model includes also physics‐based dynamic thermal effect and scaleable measurement‐based noise model that makes it the most comprehensive and most practical in industry. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 604–611, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24995

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Analytical bias dependent noise model for InP HEMT's

Cited by 33 publications

References 16 publications

Low-noise properties of dry gate recess etched InP HEMTs

Low-noise properties of dry gate recess etched InP HEMTs

Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Scaleable comprehensive low‐noise PHEMT model that predicts IP3 and noise

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