Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Zhu, Yu; Wei, Chang; Klimashov, Oleksiy; Li, Binghui; Zhang, C.; Tkachenko, Y.A.

doi:10.1109/emicc.2008.4772288

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…The noise resistance is R n , the noise conductance is G n , the signal source admittance is Y s = G s + jB s , the correlation admittance is Y cor = G cor + jB cor , and the optimum source admittance is Y opt = G opt + jB opt , where G opt and B opt are optimal source conductance and susceptance, 29 respectively, as shown in Figure 13. The NF min can be realised 30 if source admittance is set to G s = G opt and B s = B opt , as indicated in Equation ( 4).…”

Section: Noise Modelling In Vertical Cavet Gan Mis-hemtsmentioning

confidence: 99%

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Janakiraman

Mohanbabu

Maheswari

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this article, vertical CAVET with boron-doped GaN layer as current blocking layer (CBL) for AlGaN/GaN is proposed in this study, and different electrical characteristics of the devices, such as DC (I ds À V ds ), small-signal radio frequency and high-frequency microwave noise performances, are characterised using Synopsys TCAD simulations. The vertical CAVET AlGaN/GaN metal-insulated semiconductor field effect transistor (MIS-HEMT) has been found to have a high threshold V T = 6.36 V, drain saturation current, I ds,sat = 3.41 kA/cm 2 , reduced OFF-state current <10 À12 and improved high frequency and noise performances. The findings provide insight on noise sources and provide information on how to improve GaN transistor noise performance. Its useful characterisation tool for learning more about the imperfections in advanced AlGaN/GaN MIS-HEMTs and how they evolve. A twoport noise equivalent-circuit description is used to calculate data for noise.Using data from noise and scattering parameters that have been measured, we evaluated the effect of noise sources due to gate and drain, as well as their correlation. The devices exhibit a minimum noise figure (NF min ) and an equivalent noise resistance (R n ) of 1.21 dB and 20 Ω at 20 GHz, with V gs = 5 V and V ds = 10 V, which is small and appropriate for low-noise amplifiers with a wide bandwidth. The maximum output power density P out of 23 dBm and the maximum PAE of 63.3% are achieved for GaN V-shaped CAVET MIS-HEMTs with V ds = 10 V at 3.12 GHz is achieved. A comparison is made between the noise performance of conventional HEMTs, MIS-HEMTs and FETs. The methods for obtaining the noise figure (NF min ) and other noise metrics are then explained and compared with those found in the literature.

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Section: Noise Modelling In Vertical Cavet Gan Mis-hemtsmentioning

confidence: 99%

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Janakiraman

Mohanbabu

Maheswari

et al. 2022

Int J RF Mic Comp-Aid Eng

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“…For a state-of-art process, the most important task is to build a gate-width scalable model, since the reason is the gatelength is fixed normally. Based on the physical scaling rules of small size devices, the performance of large size devices can be evaluated [7], [8], [9], [10] and provide feedback for process control data.…”

Section: Introductionmentioning

confidence: 99%

Scalable Small Signal and Noise Modeling of InP HEMT for THz Application

Zhang

Gao

2023

IEEE J. Electron Devices Soc.

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Scalable small signal and noise modeling for 90nm InP high electron mobility transistor (HEMT) is proposed in this paper. Analytical expressions for the noise parameters of the intrinsic part are derived from an accurate small signal and noise equivalent circuit model. The experimental and theoretical results show that at the same bias condition, good scaling can be achieved between the HEMTs with different gate widths. Model verification is carried out by comparison of measured and simulated S-parameters up to 325 GHz and noise parameters up to 40GHz. Good agreement is obtained for 90 nm gate-length devices of gate widths including 2×15 μm, 2×20 μm and 2×25 μm gate width (number of gate fingers ×unit gate width ×cells). The proposed model can be used to predict the S-parameters and noise performance of HEMTs with different geometry accurately.

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“…Several efforts have been made to further improve the noise properties of GaN devices by optimising device geometries, including their source-drain spacing [8] and gate width [9], and by using different gate structures [10]. A T-gate structure is generally employed due to its smaller footprint, which reduces gate length and broadens the head, and hence reduces gate resistance.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale material parameters based modeling of thermal noise in GaN HEMTs

Madhulika¹,

Malik²,

Kamboj³

et al. 2020

Semicond. Sci. Technol.

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In this paper, we present an improved analytical model for predicting thermal noise in high-electron-mobility transistors (HEMTs) that considers the material's intrinsic properties at the nanoscale, specifically, its permittivity and melting point. The developed model is validated by comparing the results obtained from the computer simulation with experimental data for different device structures fabricated from an AlGaN/GaN-based two-dimensional electron gas. Furthermore, it is demonstrated that the nanoscale material's structural properties have to be considered to estimate the noise characteristics of the HEMT device accurately.

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Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Cited by 9 publications

References 7 publications

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Scalable Small Signal and Noise Modeling of InP HEMT for THz Application

Nanoscale material parameters based modeling of thermal noise in GaN HEMTs

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