Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold

Hernandez-Barrios, Y.; Cerdeira, A.; Estrada, M.; Iñı́guez, Benjamı́n

doi:10.1109/ted.2020.2983380

Cited by 6 publications

(7 citation statements)

References 24 publications

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“…An additional gate is one of the most powerful solutions for the above-mentioned problems: the threshold voltage shift with channel length scaling and bias stress-induced instability. An extra gate solves these issues by enhancing the gate controllability on the channel and inducing soft band bending within the semiconductor while bias stress is applied [51][52][53] . The second gate, however, requires extra steps, including thin film deposition, photolithography, and patterning which increases the cost and lowers the throughput.…”

Section: Metal Oxide Tft With Superior Performance and Stabilitymentioning

confidence: 99%

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Park

et al. 2022

Nat Commun

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Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. However, they are unfavorable for building stretchable electronic products due to their brittle nature. Because of this drawback, they have mostly been placed on non-stretchable parts to avoid mechanical strain, burdening the deformable interconnects, which link these rigid parts, with the strain of the entire system. Integration density must therefore be sacrificed when stretchability is the first priority because the portion of stretchable wirings should be raised. In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embedding the devices into stretchable serpentine strings to defeat such trade-off. The embedded transistors do not hide from deformation and endure strain up to 100% by themselves; thus, integration density can be enhanced without sacrificing the stretchability. We expect that our approach can create more compact stretchable electronics with high-end functionality than before.

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Section: Metal Oxide Tft With Superior Performance and Stabilitymentioning

confidence: 99%

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Park

et al. 2022

Nat Commun

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“…The following field effect mobility expression as function of the gate voltage for amorphous double-gate IGZO TFTs was proposed and reported in [7]:…”

Section: Above Thresholdmentioning

confidence: 99%

“…In [7], we presented a current-voltage (I-V) analytical model for double-gate (DG) AOSTFTs in above threshold * Author to whom any correspondence should be addressed. regime, which considers the traps state physics associated to the density of states (DOS), and conduction mechanisms in AOSTFTs.…”

Section: Introductionmentioning

confidence: 99%

“…In this article, we present a full analytical model (FAM) including the current-voltage (I-V) and capacitance-voltage (C-V) models for symmetric DG AOSTFTs, which complements the previously reported I-V model in [7], validated for experimental transistor, and includes the specific analytical expressions for the capacitances, required for DC and AC simulations. The model was implemented in Verilog-A and tested in Silvaco SmartSpice simulation program.…”

Section: Introductionmentioning

confidence: 99%

“…Another dimension indicated in the figure is the [8,9] was simulated to obtain its I-V curves and compare simulated with measured. Details about how we reproduced the experimental curve of the device by simulation were reported in [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analytical I–V and C–V models for symmetric double-gate AOSTFTs

Hernandez-Barrios¹,

Estrada²,

Pashkovich³

et al. 2021

Semicond. Sci. Technol.

Self Cite

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In this article we present a full physical analytical model (FAM) for symmetric double-gate amorphous oxide semiconductor TFTs (DG AOSTFTs). The current-voltage (I-V) model is physically described for the above-threshold operation regime. In this case, the general expression for the field effect mobility is evaluated for the potential at the centre of the semiconductor layer at V G = 1 + V T , obtaining the value of the mobility parameter called µ 1DG for DG-AOSTFT. This parameter can now be used to represent the field effect mobility expression like in the model known as the unified model and extraction method, which is widely used for modelling amorphous devices. The proposed FAM model contains the analytical capacitances-voltage (C-V) model and considers the specific characteristics of DG structures, including the potential different from zero, at the centre of the semiconductor layer. The model was described in Verilog-A for introducing in Silvaco's SmartSpice simulation program and was validated with simulated data and experimental characteristics of reported DG amorphous indium-galium-zinc oxide devices.

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Generalized Boltzmann relations in semiconductors including band tails

Beckers

Jazaeri

et al. 2021

Journal of Applied Physics

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Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required Fermi–Dirac integral is first recast as a Gauss hypergeometric function followed by a suitable transformation of that special function and a zeroth-order series expansion using the hypergeometric series. This results in simple relations for the electron and hole densities that each involve two exponentials. One exponential depends on the temperature and the other one on the band-tail parameter. The proposed relations tend to the Boltzmann relations if the band-tail parameters tend to zero. This work is timely for the modeling of semiconductor devices at cryogenic temperatures for large-scale quantum computing.

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Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold

Cited by 6 publications

References 24 publications

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Analytical I–V and C–V models for symmetric double-gate AOSTFTs

Generalized Boltzmann relations in semiconductors including band tails

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