2005
DOI: 10.1016/j.sse.2005.06.006
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Analytical model for C–V characteristic of fully depleted SOI–MOS capacitors

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Cited by 2 publications
(1 citation statement)
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“…The capacitance–voltage ( C – V ) measurement is one of the most convenient methods to characterize field‐effect capacitive structures. While the C – V characteristics of conventional Si‐based MOS 15, 16 and EIS 17–21 structures as well as SOI‐based MOS structures 22–24 have widely been studied, to our best knowledge, no work has been done on the C – V characterization of nanoplate EISOI capacitors. In this study, frequency‐dependent C – V and impedance‐spectroscopy (IS) characteristics of field‐effect nanoplate EISOI structures with various thicknesses of the top Si layer are investigated for the first time.…”
Section: Introductionmentioning
confidence: 99%
“…The capacitance–voltage ( C – V ) measurement is one of the most convenient methods to characterize field‐effect capacitive structures. While the C – V characteristics of conventional Si‐based MOS 15, 16 and EIS 17–21 structures as well as SOI‐based MOS structures 22–24 have widely been studied, to our best knowledge, no work has been done on the C – V characterization of nanoplate EISOI capacitors. In this study, frequency‐dependent C – V and impedance‐spectroscopy (IS) characteristics of field‐effect nanoplate EISOI structures with various thicknesses of the top Si layer are investigated for the first time.…”
Section: Introductionmentioning
confidence: 99%