Analytical model for the optimization of locally contacted solar cells

Plagwitz, Heiko; Schaper, Martin; Schmidt, Jan; Terheiden, Barbara; Brendel, Rolf

doi:10.1109/pvsc.2005.1488301

Cited by 11 publications

(7 citation statements)

References 5 publications

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“…Equation (1) holds for arbitrary values of S met as long as low-injection conditions prevail. It has been verified experimentally on lifetime test structures 22 as well as on solar cells. 23 According to Equation (1) the minimum SRV S r,min for a pointcontact rear with perfect passivation in the nonmetallized area (i.e.…”

Section: Solar Cell Resultsmentioning

confidence: 92%

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃

Schmidt

Merkle

Brendel

et al. 2008

Progress in Photovoltaics

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436

242

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Atomic-layer-deposited aluminium oxide (Al 2 O 3 ) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al 2 O 3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20Á6%. The best results are obtained for a stack consisting of a 30 nm Al 2 O 3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiO x ) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single-layer of Al 2 O 3 , resulting in a rear SRV of 90 cm/s.464 J. SCHMIDT ET AL. Thermal SiO 2 (220 nm) 90 AE 20 91 AE 1 Al 2 O 3 (130 nm) 90 AE 20 90 AE 1 Al 2 O 3 (30 nm)/SiO x (200 nm) 70 AE 20 91 AE 1

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Section: Solar Cell Resultsmentioning

confidence: 92%

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃

Schmidt

Merkle

Brendel

et al. 2008

Progress in Photovoltaics

Self Cite

436

242

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“…The intrinsic layer in such cells is an hydrogenated amorphous silicon layer (a‐Si:H), which saturates the dangling bonds at the surface and gives an excellent surface passivation. Previous studies have shown that for silicon wafers with surface passivation of a‐Si:H and a resistivity of approximately 1.5 Ω cm, the surface recombination velocity can approach ∼1.3 cm s −1 . The a‐Si:H layer is typically deposited by plasma‐enhanced chemical vapor deposition (PECVD) at temperatures between 150 and 250 °C.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of hydrogenated amorphous silicon passivation for p‐type crystalline silicon

Cheng

Marstein

Haug

et al. 2015

Physica Status Solidi (a)

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The thermal stability of hydrogenated amorphous silicon‐passivated monocrystalline silicon wafers is investigated at different annealing times and temperatures. Stepwise thermal annealing was performed at temperatures ranging from 100 to 500 °C for 1, 5 and 15 min, respectively, and the effective minority carrier lifetime was measured after each annealing step using carrier density imaging. Annealing at lower temperatures up to 250 °C results in a significant improvement of the effective carrier lifetime compared with that of as‐deposited samples, increasing to a maximum value of ∼1.5 ms after annealing the sample at 200 °C for 15 min. Annealing at temperatures from 350 °C and upwards results in a reduction of the effective carrier lifetime of all samples. The temperature dependence of the effective lifetime after annealing was investigated by separating the temperature into in three separate ranges; activation‐, peak‐ and degradation. The limits of the activation and degradation temperature: TnormalA≤203.9°C,TnormalD≥421.6°C were obtained through annealing experiments. The activation energy for the process responsible for the lifetime improvement was found to be 0.2 eV. An initial degradation energy around 2.1 eV was obtained for degradation process, which can be correlated with H effusion.

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“…Most commonly used are thermally grown silicon oxides [1] and passivation layers deposited via plasma-enhanced chemical vapour deposition (PECVD) such as aluminium oxide (AlO x ) [2,3] and silicon nitride (SiN) [4,5] which all allow for very low surface recombination velocities. Also double layer passivation systems consisting of two different silicon nitrides [6,7] or an amorphous silicon (a-Si) layer and a SiN layer [8,9] are applied. Recently, also silicon oxynitrides are investigated as passivation layer for solar cell application [10][11][12][13].…”

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confidence: 99%

Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

Schwab

Hofmann

Heller

et al. 2013

Phys. Status Solidi A

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This work investigates a double layer stack system that can be used for surface passivation of crystalline silicon. The stack consists of amorphous silicon-rich silicon oxynitride and amorphous silicon nitride on top. Both layers are fabricated by means of plasma-enhanced chemical vapour deposition. We investigate the stack in terms of changes in the hydrogen content and distribution within the different stack layers due to a high temperature treatment. For that purpose the stack is studied by Fourier-transformed infrared spectroscopy and nuclear reaction analysis before and after fast firing at 850°C. Our results determine the bottom silicon oxynitride layer as very hydrogen-rich. Furthermore, we identify the silicon nitride capping layer as diffusion barrier to atomic hydrogen but still allowing an effusion of molecular hydrogen. We present a qualitative model that explains our findings and distinguishes between atomic and molecular hydrogen

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Analytical model for the optimization of locally contacted solar cells

Cited by 11 publications

References 5 publications

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃

Thermal stability of hydrogenated amorphous silicon passivation for p‐type crystalline silicon

Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

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Analytical model for the optimization of locally contacted solar cells

Cited by 11 publications

References 5 publications

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

Thermal stability of hydrogenated amorphous silicon passivation for p‐type crystalline silicon

Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

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Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al₂O₃