2012
DOI: 10.1088/1674-1056/21/4/048501
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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

Abstract: By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal-oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness… Show more

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Cited by 4 publications
(5 citation statements)
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“…This step potential ensures better screening of the channel region near the source from drain voltage of JLDMCSG. [3] In addition, good agreement between the results of our model and those of ISE is obtained. Figure 3 shows the central potential profile for JLSMCSG and JLDMCSG with different drain voltages.…”
Section: Results Discussionsupporting
confidence: 68%
See 1 more Smart Citation
“…This step potential ensures better screening of the channel region near the source from drain voltage of JLDMCSG. [3] In addition, good agreement between the results of our model and those of ISE is obtained. Figure 3 shows the central potential profile for JLSMCSG and JLDMCSG with different drain voltages.…”
Section: Results Discussionsupporting
confidence: 68%
“…Due to superior gate controllability, the cylindrical surrounding-gate (CSG) metal-oxide-semiconductor fieldeffect transistor (MOSFET) has been regarded as one of the most promising devices to extend the scaling limit of CMOS technology. [1][2][3] However, the formation of the abrupt source and drain junctions in the conventional CSG MOSFET imposes several challenges on doping techniques and thermal budget. [4] In order to alleviate these problems, the junctionless (JL) MOSFET has been proposed recently.…”
Section: Introductionmentioning
confidence: 99%
“…Based on the experimental C-V curves, we can extract the values of C s using Eq. (1). Then the relationship between ψ s and V g can be extracted from Eq.…”
Section: Resultsmentioning
confidence: 99%
“…However, a major problem is the lack of high quality and thermodynamically stable dielectric that can be used to fabricate high quality GaAs MOSFET. [1] High interface trap density [2] can lower the channel electron mobility, thus leading to the degradation of device electrical properties. For GaAs MOS devices, the values of interface trap density reported by different authors were between 5×10 11 cm −2 •eV −1 -6.9×10 12 cm −2 •eV −1 , [3] but for Si/SiO 2 MOS, it is 10 10 cm −2 •eV −1 .…”
Section: Introductionmentioning
confidence: 99%
“…Due to the ideal symmetry structure and excellent gate control ability, cylindrical surrounding-gate (CSG) metaloxide-semiconductor field-effect transistors (MOSFETs) are regarded as the most promising devices for extending the scaling limit of CMOS technology. [1][2][3][4] However, the formation of the ultra-sharp source/drain junction of CSG MOS-FETs still imposes several challenges on the doping techniques and thermal budget. [5,6] In order to overcome these challenges, junctionless cylindrical surrounding-gate (JLCSG) MOSFETs have been proposed, [7] and their superior characteristics have been demonstrated by experiments and analytical models.…”
Section: Introductionmentioning
confidence: 99%