Analytical model of buried air partial SOI LDMOS

Xing, Jingyu; Duan, Baoxing; Dong, Ziming; Wang, Xiameng; Yang, Yintang

doi:10.1016/j.spmi.2019.106162

Cited by 4 publications

(8 citation statements)

References 9 publications

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“…When the buried layer is a insulating medium with other dielectric constant, it is (4b). Where the electric field distribution of the dielectric layer is approximately uniform, tsubi is the depth of depletion layer [30], εs and εli are respectively the dielectric coefficient of Silicon and buried layers.…”

Section: ( ) ( )mentioning

confidence: 99%

“…On the basis of the equation 1, the first-order partial derivatives are simultaneously obtained for both sides of the formula (2), and combined with equation 3- (7), the surface potential distribution of the device can be expressed as (8). And where ti is the characteristic thickness of each region [20,21,28,30].…”

Section: ( ) ( )mentioning

confidence: 99%

“…Where teff is the equivalent characteristic thickness of the device [20,21,28,30] and the EC is the critical breakdown electric field of the silicon. When the device is not completely depleted, the cross-section view of the depletion region is shown in Fig.…”

Section: ( ) ( )mentioning

confidence: 99%

“…When modeling the APSOI structure based on the unified numerical model, the drift region is divided into three regions according to the different materials at the buried layer. Substituting n=3 into the unified model, with the thickness of drift region ts and the thickness of buried layer tl, and the boundary conditions and ti conforming to the structural characteristics of the APSOI are combined to obtain a detailed 2-D analytical model of the APSOI structure [30].…”

Section: Model For Apsoi From the Unified Electric Field Modulatiomentioning

confidence: 99%

See 3 more Smart Citations

Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Duan

Xing

Dong

et al. 2020

IEEE J. Electron Devices Soc.

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The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation. The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field distribution of the device. Also, the simulation results obtained through the simulation software ISE are consistent with the expected results of the analytical model. This not only proves the feasibility of the electric field modulation theory, but also shows that the accurate analytical model will be of great guiding significance for designing and optimizing the same LDMOS based on SOI structures.

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Section: ( ) ( )mentioning

confidence: 99%

Section: ( ) ( )mentioning

confidence: 99%

Section: ( ) ( )mentioning

confidence: 99%

Section: Model For Apsoi From the Unified Electric Field Modulatiomentioning

confidence: 99%

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Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Duan

Xing

Dong

et al. 2020

IEEE J. Electron Devices Soc.

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“…Regarding the static breakdown voltage (StBV) of silicon-oninsulator (SOI) lateral double-diffused metal-oxidesemiconductor (LDMOS), when the device is in the off state, there is an inversion layer under the buried oxide (BOX), and the blocking voltage can only be sustained by the drift region and the BOX [1]- [2]. Due to the limitation of the device's vertical dimension, it is difficult for conventional SOI LDMOS to obtain a BV higher than 600 V. To allow SOI LDMOS to be used in high voltage integrated circuits, many new device structures have been proposed [3]- [15], some with breakdown voltages (BVs) exceeding 1000 V [13]- [15]. However, these high voltage structures are all based on the research results of StBV.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage

Yang

Cao

et al. 2020

IEEE Access

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With two-dimensional device simulation software, the influence of the deep depletion (DD) of the silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) device substrate on the transient breakdown voltage (TrBV) was analyzed. Based on the changes in the characteristics of the charge distribution and the depletion layer in the device substrate with time and the related parameters in the off state, the mechanism of their action on the transverse and vertical breakdown voltages (BVs) was studied. TrBV demonstrates completely different characteristics from the static breakdown voltage (StBV) due to the DD effect of SOI LDMOSs. Low drift region concentration (Nd) and substrate doping concentration (Psub) are conducive to obtaining a high maximum TrBV. With increasing drain voltage (Vd), the turn-off nonbreakdown time (Tnonbv) of the device with higher Psub decreases faster. However, the Tnonbv with higher Psub is higher at low Vd. Therefore, the maximum Tnonbv can be obtained by optimizing Nd and Psub under a given Vd. In addition, Tnonbv is greatly reduced with increasing temperature.INDEX TERMS Silicon-on-insulator (SOI), MOS devices, deep depletion (DD), breakdown voltage (BV).

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Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4

Daneshpajooh

Anvarifard

2022

Int J Numerical Modelling

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A new structure of metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) with lateral double‐diffused MOSFET was introduced based on the silicon‐on‐insulator lightly doped‐drain metal‐oxide‐semiconductor field‐effect‐transistor (SOI‐LDD MOSFET) technology, called recessed silicon nitride lateral‐double diffused silicon‐on‐insulator (RS‐LDD SOI). In the proposed structure, a recession was created on the buried oxide layer and filled with a silicon nitride (SI3N4) layer. Silicon nitride makes the electric field distribution more uniform by modulating the electric field in the drift zone, thereby increasing the breakdown voltage of the proposed structure. The simulation results performed with ATLAS software demonstrated the performance improvement of the proposed structure. Increasing the breakdown voltage by 31% compared to the conventional structure was one of the most important achievements of this work. Also, design considerations were made on the submerged part in the buried oxide, which can be an excellent guide to achieving the optimal performance of the proposed structure.

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Analytical model of buried air partial SOI LDMOS

Cited by 4 publications

References 9 publications

Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage

Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4

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