Analytical modeling of 2DEG and 2DHG charge balancing in quaternary $$\hbox {Al}_{0.42}\hbox {In}_{0.03}\hbox {Ga}_{0.55}\hbox {N/Al}_{0.3}\hbox {In}_{0.7}\hbox {N}$$Al0.42In0.03Ga0.55N/Al0.3In0.7N HEMTs

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

“…There exist two sorts of polarization which are characterized by spontaneous and piezoelectric polarization. The spontaneous polarization uses Vegard's formula 4,18 :…”

“…where, σ b ,σ ch,n ,and σ ch,p = the total polarization charges of the barrier material of upper and lower AlInN (the latter two being equal in size), σ n andσ p = the electron and hole charge density, respectively, ε ch,p ,ε b ,and ε ch,n = the specific permittivity of p-channel, barrier, and n-channel region, respectively, ∈ ch,p , ∈ b ,and∈ ch,n = the electric field p-channel, barrier, and n-channel region, respectively, h is Planck's constant, m* effective mass of the holes in the channel, ∅ p denotes Schottky barrier height, C ch,p ,C ch,n ,and C b denote the thickness of the p channel, n channel, and barrier, respectively, and p s the sheet carrier concentration in a 2DHG. 4 From Equation (10), C ch,p > > C ch,n and C b > > C ch,n because buffer is much thicker than the p-channel layer on top, and the term πh 2 em * is much smaller than 1.…”

“…The sheet carrier relating the hole in terms of electron at the interface layer of AlInN/AlInGaN/AlInN HEMT is given in Equation (12), and these hole charges play a major role in the shielding of electron densities. 4…”

“…The lattice-matched binary material composition such as AlN, InN, and GaN of high electron mobility transistors (HEMTs) is attractive due to their stupendous DC and RF performance. [3][4][5][6][7][8][9][10][11][12][13][14][15][16] However, the improvement in 2-D electron gas (2DEG) mobility of quaternary-based heterostructures is primary important to explore in contention with ternary devices. Thereby, augmented interface roughness scattering leads the strain between AlN and InN of binary materials which duly affects the mobility.…”

“…The impact of strain over the large barrier thickness lead to formation of two-dimensional hole gas (2DHG) on top of 2DEG. 4,22 This incidence of 2DHG confines the carrier charge of 2DEG inside the quantum well (QW), and these lead to improvement in the dynamic performance of the device. The formation of 2DHG in GaN-based HEMTs device is explained in Junda et al and Hahn et al 21,22 with low resistance and high blocking voltages, whereas no RF data analysis is reported.…”