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A physics-based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi-triangular quantum well (QW). The derived charge carrier densities n s and p s are considered for energy subbands E o and E 1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (I d ), transconductance current gain (g m ), and cutoff frequency (f t ) for different gate length and width are verified with experimental data for upcoming nano-scale devices.KEYWORDS two-dimensional electron gas n s (2DEG), two-dimensional hole gas p s (2DHG), AlInGaN, drain current I d , quantum well (QW), transconductance current gain g m and cutoff frequency f t

A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by considering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.