Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

Chandra, S. Theodore; Balamurugan, N. B.; Bhuvaneswari, M. S.; Anbuselvan, N.; Mohankumar, N.

doi:10.1088/1674-4926/36/6/064003

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…Some of them are based on simplistic approximations 19–23 or nonlinear expressions 24–26 . Other authors have used regional models 27–30 and later the expressions for each region have been unified in a single approximate model 31–37 …”

Section: Introductionmentioning

confidence: 99%

“…Some of them are based on simplistic approximations [19][20][21][22][23] or nonlinear expressions. [24][25][26] Other authors have used regional models [27][28][29][30] and later the expressions for each region have been unified in a single approximate model. [31][32][33][34][35][36][37] In this article, we propose useful compact approximate expressions for the carrier density and the drain current of HEMTs as an explicit function of the terminal voltages.…”

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confidence: 99%

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Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function

Rouag

Trad

Aounallah

et al. 2023

Int J Numerical Modelling

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Simple analytic expressions are presented for the two‐dimensional electron gas density and the drain current in a high‐electron mobility transistor. These compact expressions, which are based on the Lambert W‐function, are continuous over the entire range of interest. The analytic differentiation or integration of the drain current can also be expressed in terms of the Lambert W‐function. The expression for carrier density is in close agreement with rigorous numerical calculations while the expression for the drain current presents reasonable agreement with measurements.

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Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function

Rouag

Trad

Aounallah

et al. 2023

Int J Numerical Modelling

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Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Anbuselvan¹,

Mohankumar²,

Mohanbabu³

2019

Int J Numerical Modelling

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A physics-based analytical model for quaternary AlInGaN high electron mobility transistors (HEMTs) is developed including two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for microwave applications. The DC and RF performance characteristics are explored by considering the quasi-triangular quantum well (QW). The derived charge carrier densities n s and p s are considered for energy subbands E o and E 1 inside QW. The 2DEG sheet carrier concentration density remains constant as long as 2DHG exists. From the derived model, the drain current (I d ), transconductance current gain (g m ), and cutoff frequency (f t ) for different gate length and width are verified with experimental data for upcoming nano-scale devices.KEYWORDS two-dimensional electron gas n s (2DEG), two-dimensional hole gas p s (2DHG), AlInGaN, drain current I d , quantum well (QW), transconductance current gain g m and cutoff frequency f t

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Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

Chin

Cheng

2016

J. Semicond.

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The widely used deep level transient spectroscopy (DLTS) theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n—p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling (DLTSDP) is proposed. Based on the relationship of its transition free energy level (TFEL) and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory.

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Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

Cited by 4 publications

References 13 publications

Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function

Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

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