Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

Baskaran, S.; Mohanbabu, A.; Anbuselvan, N.; Mohankumar, N.; Godwinraj, D.; Sarkar, Chandan Kumar

doi:10.1016/j.spmi.2013.10.019

Cited by 23 publications

(9 citation statements)

References 16 publications

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“…Figure is taken for drain current with different values of V gs along with V ds compared with experimental data. Experimental data are taken from . The results are in good agreement with each other.…”

Section: Resultssupporting

confidence: 69%

“…The spontaneous and piezoelectric polarization effects have been considered in the calculation of the 2DEG sheet charge density. Thus, Equation becomes

((), 1 - \frac{{dV}_{c} ((), x)}{F_{c} d_{X}}) I_{D} = italicqW μ_{0} ((), - \frac{{dV}_{c} ((), x)}{dx}) η_{s} ((), x),

where ηs is the sheet charge density and the drain current is obtained by integrating the left side from 0 to L and right side from V s to V d . The drain current becomes

I_{D} = ξ ([], \begin{array}{l} 288 θ^{6} {log}_{e} ((), t_{drain} + t_{source}) - 816 θ^{5} ((), t_{drain} - t_{source}) + 480 θ^{4} ((), {t_{drain}}^{2} - {t_{source}}^{2}) - 200 θ^{3} ((), {t_{drain}}^{3} - {t_{source}}^{3}) + \\ 52.5 θ^{2} ((), {t_{drain}}^{3} - {t_{source}}^{3}) - 7.8 θ ((), {t_{drain}}^{5} - {t_{source}}^{5}) + 0.5 ((), {t_{drain}}^{2} - {t_{source}}^{2}) + 0.5 ((), {t_{drain}}^{6} - {t_{source}}^{6}) \end{array}) .

Let

t_{s} = {(V_{italicgs} - Vth - V_{s})}^{\frac{1}{3}} + 2 θ t_{d} = {(V_{italicgs} - Vth - V_{d})}^{1...}

…”

Section: Model Formulationmentioning

confidence: 99%

See 1 more Smart Citation

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

S¹,

Balamurugan²

2019

Int J Numerical Modelling

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A model for a dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor has been developed by a finite difference method. The method permits the modeling of dual material as two individual single materials by splitting the 2‐D Poisson equation into two separate 1‐D equations. The unified model of two separate 1‐D equations is formed by applying the boundary conditions. The proposed model estimates the surface potential, electric field, threshold voltage, and drain current by considering the work functions of two metal gates, their length difference, and applied drain voltage. The accuracy of the model can be verified using Technology Computer‐Aided Design (TCAD) simulations.

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Section: Resultssupporting

confidence: 69%

“…The spontaneous and piezoelectric polarization effects have been considered in the calculation of the 2DEG sheet charge density. Thus, Equation becomes

((), 1 - \frac{{dV}_{c} ((), x)}{F_{c} d_{X}}) I_{D} = italicqW μ_{0} ((), - \frac{{dV}_{c} ((), x)}{dx}) η_{s} ((), x),

where ηs is the sheet charge density and the drain current is obtained by integrating the left side from 0 to L and right side from V s to V d . The drain current becomes

I_{D} = ξ ([], \begin{array}{l} 288 θ^{6} {log}_{e} ((), t_{drain} + t_{source}) - 816 θ^{5} ((), t_{drain} - t_{source}) + 480 θ^{4} ((), {t_{drain}}^{2} - {t_{source}}^{2}) - 200 θ^{3} ((), {t_{drain}}^{3} - {t_{source}}^{3}) + \\ 52.5 θ^{2} ((), {t_{drain}}^{3} - {t_{source}}^{3}) - 7.8 θ ((), {t_{drain}}^{5} - {t_{source}}^{5}) + 0.5 ((), {t_{drain}}^{2} - {t_{source}}^{2}) + 0.5 ((), {t_{drain}}^{6} - {t_{source}}^{6}) \end{array}) .

Let

t_{s} = {(V_{italicgs} - Vth - V_{s})}^{\frac{1}{3}} + 2 θ t_{d} = {(V_{italicgs} - Vth - V_{d})}^{1...}

…”

Section: Model Formulationmentioning

confidence: 99%

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

S¹,

Balamurugan²

2019

Int J Numerical Modelling

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“…The band gaps of required binary compounds are estimated as a factor of temperature T using Equations (1) and (2). 41,42

E_{normalg} (italicGaN) = 3.507 - \frac{0.909 \times 10^{- 3} T^{2}}{T + 830},

E_{normalg} (italicAlN) = 6.23 - \frac{1.799 \times 10^{- 3} T^{2}}{T + 1462} .

…”

Section: Device Simulation Modelsmentioning

confidence: 99%

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga₂O₃ substrate

Rao,

Lenka,

Boukort

et al. 2023

Int J Numerical Modelling

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In this work, a field plated recessed gate III‐nitride HEMT on β‐Ga2O3 substrate is proposed using AlN spacer between AlGaN and GaN layers. The two‐dimensional electron gas (2DEG) transport characteristics, input/output, and RF characteristics of the proposed HEMT with AlN spacer layer of different thickness (1, 2, 3, 4, and 5 nm) are numerically simulated and compared with HEMT without spacer layer. The 2DEG, which is created at the junction of AlGaN/GaN, plays a crucial role in the operation of GaN HEMTs. With the help of AlN as spacer layer between AlGaN and GaN, an augmented 2DEG concentration is accomplished owing to its large conduction band offset, high polarization effect, and higher barrier. Additionally, the inclusion of AlN spacer layer shifts the 2DEG density away from interface, resulting minimized interface scattering which results into greater mobility. The HEMT exhibited a mobility of 1261 cm2/Vs, threshold voltage of −0.45 V, drain current of 1.12 A/mm, breakdown voltage of 149 V, and excellent RF characteristics, that is, cut‐off frequency (maximum oscillation frequency) of 384 GHz (546 GHz) using 2‐nm AlN spacer layer. The proposed III‐nitride HEMT on β‐Ga2O3 substrate with 2‐nm AlN spacer can be used for RF/microwave and high‐power nanoelectronics applications.

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“…The structure of AlGaN/GaN is shown in Figure 2. Strain happening in the top layer causes piezoelectric polarization which could be five times of that happening in conventional AlGaAs/GaAs structure which significantly increases the carrier concentration of the interface (Baskaran et al, 2013). In comparison to AlGaN/GaN, the addition of InGaN layer has higher piezoelectric polarization.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling of AlGaN/GaN/InGaN High Electron Mobility Transistors (HEMTs) through polarization effects

Sandeep¹,

Pravin²

2021

3C Tecnología

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Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

Cited by 23 publications

References 16 publications

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga₂O₃ substrate

Analytical modeling of AlGaN/GaN/InGaN High Electron Mobility Transistors (HEMTs) through polarization effects

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Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

Cited by 23 publications

References 16 publications

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate

Analytical modeling of AlGaN/GaN/InGaN High Electron Mobility Transistors (HEMTs) through polarization effects

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Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga₂O₃ substrate