Analytical modeling of contact resistance in organic transistors

Abstract

Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance a re considered equal due to the symmetry of the measured structure

Controlling Polymorphism in Poly(3‐Hexylthiophene) through Addition of Ferrocene for Enhanced Charge Mobilities in Thin‐Film Transistors

“…The channel is “pinched off” because the larger stabilization of the drain potential compared to the gate potential prevents resonance between the Fermi energy and the unoccupied levels and hence the injection of electrons at the drain . Equation was used to extract the hole mobility, where I D is the current between the source and drain, L and W is the length and width of the channel separating the source and drain, μ is the charge mobility in the active layer, C is the capacitance of the dielectric, V G is the gate voltage, and V T is the threshold voltage …”

Measurement and Simulation of Mosfet Device Parameters

“…This is particularly important when a MOSFET is desired to operate at 0-5 V gate voltage provided by microprocessors. For this reason, we need to measure the currentvoltage characteristics of these devices in detail [1,2].…”