Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance a re considered equal due to the symmetry of the measured structure

This article contains a short presentation of an improved system for environmental monitor and control in terms of efficiency, performance and flexibility. The main topics cover: the basic concepts of the system, the implementation characteristics and the standards of performance. In the end, the advantages and disadvantages of this system are pointed, along with some future development guidelines.

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO 2 , TiO 2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO 2 based structure has better performance than the SiO 2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers.

MOS capacitor devices based on silicon carbide (SiC) are largely used as hydrogen detectors in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is analyzed by extensive simulations. The sensitivity to hydrogen detection, stability to temperature variation and dependence on interface states concentration are evaluated. The effects of structure parameters on sensors performance are also investigated. Results show that the oxide layer type and thickness and the SiC polytype have a significant influence on the detectors performance. The proposed optimum structure for high temperature hydrogen detection is based on 3C-SiC substrate and 10nm TiO2 layer. In accordance with the simulations results, three types of masks are designed for the fabrication of SiC MOS capacitor structures.