Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Ofrim, Bogdan Alexandru; Udrea, F.; Brezeanu, Gheorghe; Hsieh, Alice Pei-Shan

doi:10.1109/smicnd.2012.6400759

Cited by 3 publications

(5 citation statements)

References 6 publications

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“…A fixed oxide charge of 1E12 cm -3 is defined in the oxide along with uniform distribution of oxide-interface traps (2E12 cm -2 .eV -1 -1E13 cm -2 .eV -1 ) from mid bandgap to conduction band. In the presence of hydrogen (H2) environment, a decrease in metal work function was reported by the presence of H2 atoms at the surface [4]. The value of Pd (Palladium) work function has been changed to 4.12 eV (from 5.12 eV), to take the influence of H2 into account.…”

Section: Methodsmentioning

confidence: 99%

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO<sub>2</sub>/6H-SiC MOS Capacitors at 700 K

Kotamraju

Vudumula

2022

MSF

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Comparison of C-V characteristics and interface trap distribution for 6H-SiC MOS capacitor with AlN and HfO2 as high-k dielectric are presented. It is observed that the transition from accumulation to inversion requires a small change in gate voltage for HfO2 compared to AlN. Furthermore, larger shift in flat band voltage with respect to frequency is observed in case of AlN. A larger change in capacitance with respect to voltage and flat band voltage shift with respect to frequency for AlN indicated a poor choice for MOS capacitor compared to HfO2.

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Section: Methodsmentioning

confidence: 99%

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO<sub>2</sub>/6H-SiC MOS Capacitors at 700 K

Kotamraju

Vudumula

2022

MSF

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“…Also, the impact of oxide layer thickness is reduced for TiO 2 . It can be observed that the smallest variation is obtained by the 10nm TiO 2 structure [5]. SiC polytype.…”

Section: Materials Science Forummentioning

confidence: 97%

“…The impact of SiC polytype is larger for SiO 2 . The smallest variation with interface states concentration is obtained by the TiO 2 structure with 3C polytype [5]. Miscellaneous.…”

Section: Materials Science Forummentioning

confidence: 98%

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High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure

Ofrim

Brezeanu

Draghici

et al. 2014

MSF

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MOS capacitor devices based on silicon carbide (SiC) are largely used as hydrogen detectors in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is analyzed by extensive simulations. The sensitivity to hydrogen detection, stability to temperature variation and dependence on interface states concentration are evaluated. The effects of structure parameters on sensors performance are also investigated. Results show that the oxide layer type and thickness and the SiC polytype have a significant influence on the detectors performance. The proposed optimum structure for high temperature hydrogen detection is based on 3C-SiC substrate and 10nm TiO2 layer. In accordance with the simulations results, three types of masks are designed for the fabrication of SiC MOS capacitor structures.

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“…As mentioned in [ 22 ], the hydrogen atoms should be maintained at concentrations below 10 ppb (parts per billion); however, the concentration of hydrogen atoms released from the packaging material may be close to 2500 ppb. In addition, SiC is also highly favored in hydrogen sensor research [ 24 , 25 , 26 ]. To fully understand the impact of hydrogen atoms on SiC MOSFETs, comprehensive studies are needed.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Special Environments on SiC MOSFETs

Li,

Jiang,

et al. 2023

Materials

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In this work, the influences of special environments (hydrogen gas and high temperature, high humidity environments) on the performance of three types of SiC MOSFETs are investigated. The results reveal several noteworthy observations. Firstly, after 500 h in a hydrogen gas environment, all the SiC MOSFETs exhibited a negative drift in threshold voltage, accompanied by an increase in maximum transconductance and drain current (@ VGS/VDS = 13 V/3 V). This phenomenon can be attributed to that the hydrogen atoms can increase the positive fixed charges in the oxide and increase the electron mobility in the channel. In addition, high temperature did not intensify the impact of hydrogen on the devices and electron mobility. Instead, prolonged exposure to high temperatures may induce stress on the SiO2/SiC interface, leading to a decrease in electron mobility, subsequently reducing the transconductance and drain current (@ VGS/VDS = 13 V/3 V). The high temperature, high humidity environment can cause a certain negative drift in the devices’ threshold voltage. With the increasing duration of the experiment, the maximum transconductance and drain current (@ VGS/VDS = 18V (20 V)/3 V) gradually decreased. This may be because the presence of moisture can lead to corrosion of the devices’ metal contacts and interconnects, which can increase the devices’ resistance and lead to a decrease in the devices’ maximum transconductance and drain current.

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Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Cited by 3 publications

References 6 publications

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO<sub>2</sub>/6H-SiC MOS Capacitors at 700 K

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO<sub>2</sub>/6H-SiC MOS Capacitors at 700 K

High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure

The Influence of Special Environments on SiC MOSFETs

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