Analytical modeling of dual-gate HFET's

Long, Wei; Lee, L.-H.; Kohn, E.; Chin, Ken K.

doi:10.1109/43.664223

Cited by 2 publications

(1 citation statement)

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“…9) Therefore, the DG structure has been considered in a wide range of RF applications, such as mixers, power amplifiers, and phase shifters. 10) From the application point of view, to reduce the system cost and circuit complexity, it is preferable to use only a one-polarity (positive) voltage supply in the circuit. However, most current DG HEMTs require a double-biasing system as conventional HEMTs show a depletion-mode (D-mode) operation with a negative threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture

Wang

Chen

2008

jjap

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We demonstrate a dual-gate (DG) AlGaN/GaN high-electron-mobility transistor (HEMT) structure with enhancement-mode (E-mode) operation. The DG device consists of an E-mode gate and a depletion-mode (D-mode) gate instead of the dual D-mode gate electrodes used in previously reported works; thus no negative voltage supply is required when the DG device is used in amplifier circuits. The E-mode DG HEMTs exhibit similar DC characteristics to E-mode single-gate devices but show a 9 dB gain improvement at 2.1 GHz under the same bias conditions. The power gain improvement can be attributed to the higher output impedance and lower feedback capacitance in the DG structure.

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Section: Introductionmentioning

confidence: 99%