Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture

Wang, Ruonan; Wu, Yilin; Chen, Kevin J.

doi:10.1143/jjap.47.2820

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…According to Eq. (1) [12] , the closer the fluorine ions are to the channel and the more fluorine ions there are in the AlGaN barrier layer, the larger the threshold voltage is. Figure 4 shows the dependence of V th on the fluorine plasma treatment power.…”

Section: Resultsmentioning

confidence: 99%

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Xie

et al. 2009

J. Semicond.

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The fabrication of enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment on sapphire substrates is reported. A new method is used to fabricate devices with different fluorine plasma RF power treatments on one wafer to avoid differences between different wafers. The plasma-treated gate regions of devices treated with different fluorine plasma RF powers were separately opened by a step-and-repeat system. The properties of these devices are compared and analyzed. The devices with 150 W fluorine plasma treatment power and with 0.6 µm gate-length exhibited a threshold voltage of 0.57 V, a maximum drain current of 501 mA/mm, a maximum transconductance of 210 mS/mm, a current gain cutoff frequency of 19.4 GHz and a maximum oscillation frequency of 26 GHz. An excessive fluorine plasma treatment power of 250 W results in a small maximum drain current, which can be attributed to the implantation of fluorine plasma in the channel.

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Section: Resultsmentioning

confidence: 99%

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Xie

et al. 2009

J. Semicond.

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“…However, an enhancement mode characteristic is more favorable in practical applications due to a lower power consumption, less failure issues, and a flexible integration. So far, there are several approaches to realize an enhancement mode operation, such as a recessed gate structure [5][6][7], p-GaN/p-AlGaN gate [2,8], Fluoride-based plasma treatment [9], the metal-oxide-semiconductor field-effect transistor structure [10], cascode-based topology in connecting high voltage D-mode HEMTs with a low voltage Si MOSFETs or E-mode HEMTs [11,12], etc. HEMTs with a p-GaN/p-AlGaN gate generally suffer the challenges to effectively dope the Mg into top GaN or AlGaN layer and to remove the top p-GaN/p-AlGaN layer in the access region.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Tang

Jiang

2020

Micromachines

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In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (gm)–gate voltage (VG) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive VG. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (VTH) toward an enhancement-mode characteristic.

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“…Therefore, it is assumed that the combination of DG configuration with MIS gate structure should be a viable scheme to simultaneously realize a high power gain and good breakdown performance. To date, dc and RF characteristics of DG HEMTs and normally-off HEMTs using DG architecture [11] have been shown, while there are still few reports available on DG MIS structure.…”

Section: Introductionmentioning

confidence: 99%

Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric

Gao

Zhang³

et al. 2015

Semicond. Sci. Technol.

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We have investigated dual-gate AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Si 3 N 4 as the gate dielectric by comparison with singlegate MIS-HEMTs. It is shown that the presence of the second gate induces a slight reduction in the maximum output current, transconductance and breakdown voltage, but with the advantages of 5 dB enhanced power gain and higher f T /f max . Combined with a physics-based device simulation, the breakdown characteristics of the dual-gate device are revealed to be dependent on the second gate. These results demonstrate that the incorporation of dual-gate configuration into the MIS gate is a potential alternative for GaN-based high-power and high-frequency applications.

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Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture

Cited by 7 publications

References 17 publications

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric

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Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture

Cited by 7 publications

References 17 publications

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4as the gate dielectric

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Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric