Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species

A simulation based novel and unique approach of controlling and modulating the threshold voltage sensitivity of a short channel surrounding gate MOSFET biosensor is investigated for improved biosensing applications. Different results show that the biosensor with symmetric doping is more sensitive to charged and neutral biomolecules when compared with the asymmetric doping. Threshold voltage sensitivity and subthreshold slope sensitivity of 4.5 and 0.44 have been obtained which shows the significance of doping attributed sensitivity. It is so find that sensitivity increases on increasing drain to source voltage because of stronger horizontal electric field across the channel. A remarkable percentage change due to the doping variation shows the improved biosensing action in terms of threshold voltage change and subthreshold slope change.

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“…Different biomolecules are characterized by their distinct dielectric constant and charge density [19,23,24].…”

Section: Resultsmentioning

confidence: 99%

Threshold Voltage Sensitivity Analysis of Surrounding Gate Mosfet for Biosensing Applications

Das

Rewari

Deswal

et al. 2022

Preprint

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“…Uricase having lowest permittivity is showing potential variation of 10% as compared to 3% for ChOx. The comparison in parameter like on current and threshold voltage for MOSHEMT and GAA-JLT [26] for detection of neutral biomolecule is shown in Table 2. A large change in drain current and threshold voltage of MOSHEMT is observed for all biomolecules.…”

Section: Resultsmentioning

confidence: 99%

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

Shaveta

Chaujar

2020

J Mater Sci: Mater Electron

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Biosensors are the devices that find application in almost every field nowadays. In this paper, GaN MOSHEMT based biosensor is proposed for detection of biomolecules such as ChOx, protein, streptavidin and Uricase. The effect of biomolecule species on the performance parameters of the device has been studied. It has been observed that there is a significant increase in the drain current and g d is observed with the addition of biomolecule in the nanocavity. The electron concentration contour is studied which shows the rise of carrier concentration with biomolecule. Maximum positive shift is observed in threshold voltage for Uricase due to lowest dielectric constant. Similarly, the change in transconductance is also obtained with biomolecules. The effect of cavity dimensions on sensitivity is also studied. The maximum increase of 10% in channel potential is noted due biomolecule presence in the cavity. This device has shown good sensing and can be used for biosensing applications efficiently in addition to the high power performance of MOS-HEMTs.

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“…The design and the analysis of the PJLT performed until this point are based on the main assumption of complete depletion. This assumption is often utilized in many scientific articles [17,[24][25][26][27][28][29][30][31][32] to provide a simple analytical formula for the depletion region width in PJLT. This formula represents an approximated model of the depletion region width.…”

Section: Analysis and Simulations Of The Approximated Modelmentioning

confidence: 99%

Analysis of an Approximated Model for the Depletion Region Width of Planar Junctionless Transistors

et al. 2019

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In this paper, we investigate the accuracy of the approximated analytical model currently utilized, by many researchers, to describe the depletion region width in planar junctionless transistors (PJLT). The proposed analysis was supported by numerical simulations performed in COMSOL Multiphysics software. By comparing the numerical results and the approximated analytical model of the depletion region width, we calculated that the model introduces a maximum RMS error equal to 90 % of the donor concentration in the substrate. The maximum error is achieved when the gate voltage approaches the threshold voltage ( V t h ) or when it approaches the flat band voltage ( V F B ) of the transistor. From these results, we concluded that this model cannot be used to determine accurately the flat-band and the threshold voltage of the transistor, although it represents a straightforward method to estimate the depletion region width in PJLT. By using the approximated analytical model, we extracted an analytical formula, which describes the electron concentration at the ideal boundary of the depletion region. This formula approximates the numerical data extracted from COMSOL with a relative error lower than 1 % . The proposed formula is in our opinion, as useful as the formula of the approximated analytical model because it allows for estimating the position of the depletion region also when the drain and source terminals are not grounded. We concluded that the analytical formula proposed at the end of this work could be useful to determine the position of the depletion region boundary in numerical simulations and in graphical representations provided by COMSOL Multiphysics software.

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Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species

Cited by 67 publications

References 22 publications

Threshold Voltage Sensitivity Analysis of Surrounding Gate Mosfet for Biosensing Applications

Threshold Voltage Sensitivity Analysis of Surrounding Gate Mosfet for Biosensing Applications

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

Analysis of an Approximated Model for the Depletion Region Width of Planar Junctionless Transistors

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