Analytical Modeling of Silicon Microring and Microdisk Modulators With Electrical and Optical Dynamics

Abstract

We propose an analytical, time domain model for microring and microdisk modulators which considers both their electrical and optical properties. Theory of the dynamics of microring/microdisk is discussed, and general solutions to the transfer matrix representation are presented. Both static and dynamic predictions from the model are compared to measurement results to demonstrate the accuracy of our model. Static predictions and measurements are presented for power and phase responses whereas dynamic predictions and measurements are presented for small-signal and large-signal operations. The model verifies that the chirping and modulation bandwidth of the modulators depend on the detuning state. Finally, the accuracy and scalability of several techniques employed in the model are discussed.

Time-Domain Large-Signal Modeling of Traveling-Wave Modulators on SOI

“…In a separate effort, the effective index method is used to model the optical waveguide mode profile [5,10] (lowest box in Fig. 1 left).…”

“…These calculations feed into the mode overlap section (middle box in Fig. 1 left), where the changes in effective refractive index, Δneff, and optical loss due to the free carrier absorption, Δα, are calculated [5,10].…”

“…2 we present the p-n junction model including physical dimensions. Following the method used in [5,10], we assume an abrupt junction with a uniform impurity profile in each doping region and step changes at the doping boundaries. A linear distribution in minority carrier densities is assumed between the depletion region and heavily doped region since the p/n region is much shorter than the diffusion length.…”

“…2 [5,10]. The capacitance and resistance vs. the applied driving voltage on p-n-junction, as depicted in Fig.…”

“…The capacitance and resistance vs. the applied driving voltage on p-n-junction, as depicted in Fig. 3a, are calculated as in [5,10]. The levels of doping used are 5 × 10 17 /cm 3 for p-dopants and 3 × 10 17 /cm 3 for ndopants as reported in [11].…”